Please wait a minute...
Chin. Phys. B, 2023, Vol. 32(4): 046101    DOI: 10.1088/1674-1056/ac8e9c
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Li Cai(蔡莉)1,†, Ya-Qing Chi(池雅庆)3, Bing Ye(叶兵)1,‡, Yu-Zhu Liu(刘郁竹)1,2, Ze He(贺泽)1,2, Hai-Bin Wang(王海滨)4, Qian Sun(孙乾)3, Rui-Qi Sun(孙瑞琪)3, Shuai Gao(高帅)1,2, Pei-Pei Hu(胡培培)1, Xiao-Yu Yan(闫晓宇)1,2, Zong-Zhen Li(李宗臻)1, and Jie Liu(刘杰)1,§
1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Computer Science, National University of Defense Technology, Changsha 410073, China;
4 College of IoT Engineering, Hohai University, Changzhou 213022, China
Abstract  The variations of single event transient (SET) pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor (FinFET) inverter chains with different driven strengths are measured at different temperatures. Three-dimensional (3D) technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature. Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk FinFET technology, resulting in the increase of SET pulse width. On the other hand, the increase of inverter driven strength will change the layout topology, which has a complex influence on the SET temperature effects of FinFET inverter chains. The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.
Keywords:  heavy ion      single event effect      single event transient      FinFET      inverter chain  
Received:  04 July 2022      Revised:  19 August 2022      Accepted manuscript online:  02 September 2022
PACS:  61.82.Fk (Semiconductors)  
  61.80.Jh (Ion radiation effects)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 12105339, and 62174180) and the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, China (Grant No. SKLIPR2113).
Corresponding Authors:  Li Cai, Bing Ye, Jie Liu     E-mail:  caili@impcas.ac.cn;yebing@impcas.ac.cn;j.liu@impcas.ac.cn

Cite this article: 

Li Cai(蔡莉), Ya-Qing Chi(池雅庆), Bing Ye(叶兵), Yu-Zhu Liu(刘郁竹), Ze He(贺泽), Hai-Bin Wang(王海滨), Qian Sun(孙乾), Rui-Qi Sun(孙瑞琪), Shuai Gao(高帅), Pei-Pei Hu(胡培培), Xiao-Yu Yan(闫晓宇), Zong-Zhen Li(李宗臻), and Jie Liu(刘杰) Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains 2023 Chin. Phys. B 32 046101

[1] Taur Y, Buchanan D A, Chen W, Frank D J, Ismail K E, Lo S H, Halasz G S, Viswanathan R G, Wann H J and Wind S J 1997 Proc. IEEE 85 486
[2] Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y and Wong H P 2001 Proc. IEEE 89 259
[3] Hisamoto D, Lee W C, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T J, Bokor J and Hu C 2000 IEEE Trans. Electron Dev. 47 2320
[4] Wu S Y, Lin C Y, Chiang M C, Liaw J J, Cheng J Y, Yang S H, Chang S Z, Liang M, Miyashita T, Tsai C H, Chang C H, Chang V S, Wu Y K, Chen J H, Chen H F, Chang S Y, Pan K H, Tsui R F, Yao C H, Ting K C, Yamamoto T, Huang H T, Lee T L, Lee C H, Chang W, Lee H M, Chen C C, Chang T, Chen R, Chiu Y H, Tsai M H, Jang S M, Chen K S and Ku Y 2014 IEEE International Electron Devices Meeting, December 15-17, 2014, San Francisco, USA, p. 3.1.1
[5] Huang R, Jiang X B, Guo S F, Ren P P, Hao P, Yu Z Q, Zhang Z, Wang Y Y and Wang R S 2017 IEEE International Electron Devices Meeting, December 2-6, 2017, San Francisco, USA, p. 12.4.1
[6] Narasimham B, Hatami S, Anvar A, Harris D M, Lin A, Wang J K, Chatterjee I, Ni K, Bhuva B L, Schrimpf R D, Reed R A and McCurdy M W 2015 IEEE Trans. Nucl. Sci. 62 2578
[7] Karp J, Hart M J, Maillard P, Hellings G and Linten D 2018 IEEE Trans. Nucl. Sci. 65 217
[8] Li D Q, Liu T Q, Wu Z Y, Cai C, Zhao P X, He Z and Liu J 2020 Microelectron. Reliab. 114 113901
[9] Agboola O 2020 A Comparative Study of Radiation Effects on CMOS and FinFET Nano Scale Transistors in Space Applications, Ph.D. Dissertation (Kingsville: Texas A&M University)
[10] Jennings D E, Cottini V, Nixon C A, Achterberg R K, Flasar F M, Kunde V G, Romani P N, Samuelson R E, Mamoutkine A, Gorius N J P, Coustenis A and Tokano T 2016 Astrophys. J. 816 L17
[11] Basilevsky A T and Head J W 2003 Rep. Prog. Phys. 66 1699
[12] Nazari A and Emami H 2008 Int. Arch. Photogramm. Remote Sens. Spat. Inf. Sci. 37 949
[13] Truyen D, Boch J, Sagnes B, Renaud N, Leduc E, Arnal S and Saigne F 2007 IEEE Trans. Nucl. Sci. 54 1025
[14] Stapor W J, Johnson R L, Xapsos M A, Fernald K W, Campbell A B, Bhuva B L and Diehi S E 1986 IEEE Trans. Nucl. Sci. 33 1610
[15] Cooper M S, Retzler J P and Messenger G C 1978 IEEE Trans. Nucl. Sci. 25 1538
[16] Johnston A H, Hughlock B W, Baze M P and Plaag R E 1991 IEEE Trans. Nucl. Sci. 38 1435
[17] Alles M L, Massengill L W and Kerns S E 1992 IEEE International SOI Conference, October 6-8, 1992, Ponte Vedra Beach, USA, p. 96
[18] Sanathanamurthy S 2008 Simulated temperature dependency of SEU sensitivity in a 0.5-μm CMOS SRAM, Ph.D. Dissertation (State of Tennessee: Vanderbilt University)
[19] Boruzdina A B, Sogoyan A V, Smolin A A, Ulanova A V, Gorbunov M S, Chumakov A I and Boychenko D V 2015 IEEE Trans. Nucl. Sci. 62 2860
[20] Qin J R, C S M and Qin J R 2012 Chin. Phys. B 21 89401
[21] Farjallah E, Gherman V, Armani J M and Dilillo L 2018 13th International Conference on Design Technology of Integrated Systems In Nanoscale Era, April 9-12, 2008, Taormina, Italy, p. 1
[22] Zhang H, Jiang H, Assis T R, Ball D R, Ni K, Kauppila J S, Schrimpf R D, Massengill L W, Bhuva B L, Narasimham B, Hatami S, Anvar A, Lin A and Wang J K 2016 IEEE International Reliability Physics Symposium, April 17-21, 2016, California, USA, p. 5C-3-1
[23] Atkinson N M, Ahlbin J R, Witulski A F, Gaspard N J, Holman W T, Bhuva B L, Zhang E X, Chen L and Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 2578
[24] Chen J, Chen S, He Y, Chi Y, Qin J, Liang B and Liu B 2012 IEEE Trans. Nucl. Sci. 59 2859
[25] Fang T, Li L Q, Xia G R and Yu Y H 2021 Chin. Phys. B 30 27301
[26] Laird J S, Hirao T, Onoda S, Mori H and Itoh H 2001 6th European Conference on Radiation and Its Effects on Components and Systems, September 10-14, 2001, Grenoble, France, p. 125
[27] Gadlage M J, Ahlbin J R, Narasimham B, Bhuva B L, Massengill L W and Schrimpf R D 2011 IEEE Trans. Dev. Mater. Reliab. 11 179
[28] Guo G, Hirao T, Laird J S, Onoda S, Wakasa T, Yamakawa T and Kamiya T 2004 IEEE Trans. Nucl. Sci. 51 2834
[29] Truyen D, Boch J, Sagnes B, Vaille J R, Renaud N, Leduc E, Briet M, Heng C, Mouton S and Saigné F 2008 IEEE Trans. Nucl. Sci. 55 2001
[30] Gadlage M J, Ahlbin J R, Ramachandran V, Gouker P, Dinkins C A, Bhuva B L, Narasimham B, Schrimpf R D, McCurdy M W and Alles M L 2009 IEEE Trans. Nucl. Sci. 56 3115
[31] Gadlage M J, Ahlbin J R, Narasimham B, Ramachandran V, Dinkins C A, Pate N D, Bhuva B L, Schrimpf R D, Massengill L W and Shuler R L 2009 IEEE Trans. Dev. Mater. Reliab. 10 157
[32] Chen S M, Liang B, Liu B W and Liu Z 2008 IEEE Trans. Nucl. Sci. 55 2914
[33] Liu B W, Chen S M, Liang B, Liu Z and Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[34] Cao J, Xu L, Wen S J, Fung R, Narasimham B, Massengill L W and Bhuva B L 2020 IEEE International Reliability Physics Symposium, April 28-May 30, 2020, Texas, USA, p. 1
[35] Kaul N, Bhuva B L and Kerns S E 1991 IEEE Trans. Nucl. Sci. 38 1514
[36] Buchner S and Baze M 2001 Nuclear and Space Radiation Effects Conference, July 16-20, 2001, Vancouver, Canada, p. 105
[37] Gadlage M J, Ahlbin J R, Bhuva B L, Massengill L W and Schrimpf R D 2010 IEEE International Reliability Physics Symposium, May 2-6, 2010, California, USA, p. 763
[38] Ahlbin J R, Atkinson N M, Gadlage M J, Gaspard N J, Bhuva B L, Loveless T D, Zhang E X, Chen L and Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 2585
[39] Narasimham B, Ramachandran V, Bhuva B L, Schrimpf R D, Witulski A F, Holman W T, Massengill L W, Black J D, Robinson W H and McMorrow D 2006 IEEE Trans. Dev. Mater. Reliab. 6 542
[40] Laird J S, Hirao T, Onoda S, Mori H and Itoh H 2001 European Conference on Radiation and Its Effects on Components and Systems, September 10-14, 2001, Grenoble, France, p. 125
[41] Messenger G C 1982 IEEE Trans. Nucl. Sci. 29 2024
[42] Artola L, Hubert G and Schrimpf R D 2013 IEEE International Reliability Physics Symposium (IRPS), April 14-18, 2013, California, USA, p. SE.1.1
[43] Liu B, Chen S, Liang B, Liu Z and Zhao Z 2009 IEEE Trans. Nucl. Sci. 56 2473
[1] Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[2] Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[3] Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology
Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Chin. Phys. B, 2022, 31(5): 056106.
[4] Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs
Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌). Chin. Phys. B, 2022, 31(12): 126103.
[5] Lattice damage in InGaN induced by swift heavy ion irradiation
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞). Chin. Phys. B, 2022, 31(10): 106103.
[6] Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices
Ren-Ren Xu(徐忍忍), Qing-Zhu Zhang(张青竹), Long-Da Zhou(周龙达), Hong Yang(杨红), Tian-Yang Gai(盖天洋), Hua-Xiang Yin(殷华湘), and Wen-Wu Wang(王文武). Chin. Phys. B, 2022, 31(1): 017301.
[7] Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation
Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Chin. Phys. B, 2021, 30(5): 056110.
[8] High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武). Chin. Phys. B, 2020, 29(8): 087303.
[9] PBTI stress-induced 1/ f noise in n-channel FinFET
Dan-Yang Chen(陈丹旸), Jin-Shun Bi(毕津顺), Kai Xi(习凯), and Gang Wang(王刚). Chin. Phys. B, 2020, 29(12): 128501.
[10] Investigation of single event effect in 28-nm system-on-chip with multi patterns
Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏)†, Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), and Heng An(安恒). Chin. Phys. B, 2020, 29(10): 108504.
[11] Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏). Chin. Phys. B, 2019, 28(6): 068503.
[12] Vibrational modes in La2Zr2O7 pyrochlore irradiated with disparate electrical energy losses
Sheng-Xia Zhang(张胜霞), Jie Liu(刘杰), Hua Xie(谢华), Li-Jun Xu(徐丽君), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Wen-Si Ai(艾文思), Peng-Fei Zhai(翟鹏飞). Chin. Phys. B, 2019, 28(11): 116102.
[13] Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Chin. Phys. B, 2018, 27(9): 097308.
[14] Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory
Jin-Shun Bi(毕津顺), Kai Xi(习凯), Bo Li(李博), Hai-Bin Wang(王海滨), Lan-Long Ji(季兰龙), Jin Li(李金), Ming Liu(刘明). Chin. Phys. B, 2018, 27(9): 098501.
[15] Influences of total ionizing dose on single event effect sensitivity in floating gate cells
Ya-Nan Yin(殷亚楠), Jie Liu(刘杰), Qing-Gang Ji(姬庆刚), Pei-Xiong Zhao(赵培雄), Tian-Qi Liu(刘天奇), Bing Ye(叶兵), Jie Luo(罗捷), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东). Chin. Phys. B, 2018, 27(8): 086103.
No Suggested Reading articles found!