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Chin. Phys. B, 2022, Vol. 31(8): 089101    DOI: 10.1088/1674-1056/ac7557
Special Issue: TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B
TOPICAL REVIEW—Celebrating 30 Years of Chinese Physics B Prev   Next  

Evolution of electrical conductivity and semiconductor to metal transition of iron oxides at extreme conditions

Yukai Zhuang(庄毓凯)1 and Qingyang Hu(胡清扬)2,†
1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
2 Center for High Pressure Science and Technology Advanced Research(HPSTAR), Beijing 100094, China
Abstract  Iron oxides are widely found as ores in Earth's crust and are also important constituents of its interiors. Their polymorphism, composition changes, and electronic structures play essential roles in controlling the structure and geodynamic properties of the solid Earth. While all-natural occurring iron oxides are semiconductors or insulators at ambient pressure, they start to metalize under pressure. Here in this work, we review the electronic conductivity and metallization of iron oxides under high-pressure conditions found in Earth's lower mantle. We summarize that the metallization of iron oxides is generally controlled by the pressure-induced bandgap closure near the Fermi level. After metallization, they possess much higher electrical and thermal conductivity, which will facilitate the thermal convection, support a more stable and thicker D$\prime\prime$ layer, and formulate Earth's magnetic field, all of which will constrain the large-scale dynamos of the mantle and core.
Keywords:  high pressure      metallization      iron oxides      electrical conductivity  
Received:  06 April 2022      Revised:  21 May 2022      Accepted manuscript online:  02 June 2022
PACS:  91.60.Gf (High-pressure behavior)  
Fund: This work is supported by the National Natural Science Foundation of China (Grant Nos. 42150101 and 42150102). Qingyang Hu is supported by the CAEP Research Project (Grant No. CX20210048) and a Tencent Xplorer Prize (Grant No. XPLORER-2020-1013).
Corresponding Authors:  Qingyang Hu     E-mail:  qingyang.hu@hpstar.ac.cn

Cite this article: 

Yukai Zhuang(庄毓凯) and Qingyang Hu(胡清扬) Evolution of electrical conductivity and semiconductor to metal transition of iron oxides at extreme conditions 2022 Chin. Phys. B 31 089101

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