Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

doi:10.1088/1674-1056/26/9/097401

Abstract

Tunneling field effect transistors (TFETs) based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here, we investigate the TFETs based on two different integration types: in-plane and vertical heterostructures composed of two kinds of layered phosphorous (β-P and δ-P) by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio (PVR) when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of ～10⁶ and a steeper subthreshold swing (SS) of ～23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of the β-P and δ-P layers in the in-plane and vertical heterostructures.

Keywords: tunneling field effect transistors negative differential resistance effect on/off current ratio subthreshold swing

Received: 07 April 2017
Revised: 24 May 2017
Accepted manuscript online:

PACS:	74.25.F-	(Transport properties)
	68.60.-p	(Physical properties of thin films, nonelectronic)
	71.15.Mb	(Density functional theory, local density approximation, gradient and other corrections)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 11604019, 61574020, and 61376018), the Ministry of Science and Technology of China (Grant No. 2016YFA0301300), the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 2016RCGD22).

Corresponding Authors: Ming Lei, Ruge Quhe
E-mail: mlei@bupt.edu.cn;quheruge@bupt.edu.cn

Cite this article:

Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌) Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures 2017 Chin. Phys. B 26 097401

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Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

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