Positive gate-bias temperature instability of ZnO thin-film transistor

doi:10.1088/1674-1056/23/6/068501

Abstract The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current-voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold-voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate-dielectric/channel interface.

Keywords: thin-film transistors (TFTs) zinc oxide gate-bias instability threshold-voltage shift

Received: 24 July 2013
Revised: 26 December 2013
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	73.61.Ga	(II-VI semiconductors)
	72.80.Ey	(III-V and II-VI semiconductors)
	73.20.-r	(Electron states at surfaces and interfaces)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085) and the Research Grants Council of Hong Kong, China (Grant No. 7133/07E).

Corresponding Authors: Liu Yu-Rong
E-mail: phlyr@scut.edu.cn

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Liu Yu-Rong (刘玉荣), Su Jing (苏晶), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河) Positive gate-bias temperature instability of ZnO thin-film transistor 2014 Chin. Phys. B 23 068501

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