Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

doi:10.1088/1674-1056/27/4/048504

Abstract In this study, indium oxide (In₂O₃) thin-film transistors (TFTs) are fabricated by two kinds of low temperature solution-processed technologies (T_a ≤ 300℃), i.e., water-based (DIW-based) process and alkoxide-based (2-ME-based) process. The thickness values, crystallization properties, chemical structures, surface roughness values, and optical properties of In₂O₃ thin-films and the electrical characteristics of In₂O₃ TFTs are studied at different annealing temperatures. Thermal annealing at higher temperature leads to an increase in the saturation mobility (μ_sat) and a negative shift in the threshold voltage (V_TH). The DIW-based processed In₂O₃-TFT annealed at 300℃ exhibits excellent device performance, and one annealed at 200℃ exhibits an acceptable μ_sat of 0.86 cm²/V·s comparable to that of a-Si:H TFTs, whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μ_sat of 1.65 cm²/Vs and one annealed at 200℃ is inactive. The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature. The DIW-based process for fabricating the In₂O₃ TFT opens the way for the development of nontoxic, low-cost, and low-temperature oxide electronics.

Keywords: water-based process alkoxide-based process annealing temperature thin-film transistors

Received: 02 November 2017
Revised: 18 January 2018
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	78.40.Fy	(Semiconductors)
	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61675024) and the National Basic Research Program of China (Grant No. 2014CB643600).

Corresponding Authors: Zhi-Nong Yu
E-mail: znyu@bit.edu.cn

Cite this article:

Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯) Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures 2018 Chin. Phys. B 27 048504

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Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

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