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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors |
| Qian Hui-Min (钱慧敏)a b, Yu Guang (于广)a b, Lu Hai (陆海)a b, Wu Chen-Fei (武辰飞)a b, Tang Lan-Feng (汤兰凤)a b, Zhou Dong (周东)a b, Ren Fang-Fang (任芳芳)a b, Zhang Rong (张荣)a b, Zheng You-Liao (郑有炓)a b, Huang Xiao-Ming (黄晓明)c |
a Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and Schoolof Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
c Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China |
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Abstract The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress= 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.
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Received: 22 January 2015
Revised: 04 March 2015
Accepted manuscript online:
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PACS:
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73.61.Jc
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(Amorphous semiconductors; glasses)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.20.At
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(Surface states, band structure, electron density of states)
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79.40.+z
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(Thermionic emission)
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| Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China |
Corresponding Authors:
Lu Hai
E-mail: hailu@nju.edu.cn
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Cite this article:
Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明) Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors 2015 Chin. Phys. B 24 077307
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