Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

doi:10.1088/1674-1056/23/2/026101

Abstract Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO₂ as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO₂ gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm²/(V·s) and 3×10⁵ are obtained, respectively. The transfer characteristics of the ZnSnO TFT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.

Keywords: zinc tin oxide thin-film transistors mobility annealing

Received: 27 December 2012
Revised: 23 July 2013
Accepted manuscript online:

PACS:	61.66.Dk	(Alloys )
	68.55.ag	(Semiconductors)
	73.61.Ga	(II-VI semiconductors)
	78.66.Hf	(II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61290305 and 91021020) and the Natural Science Foundation of Zhejiang Province, China (Grant No. Z6100117).

Corresponding Authors: Wu Hui-Zhen
E-mail: hzwu@zju.edu.cn

About author: 61.66.Dk; 68.55.ag; 73.61.Ga; 78.66.Hf

Cite this article:

Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢) Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor 2014 Chin. Phys. B 23 026101

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Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

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