CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor |
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) |
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China |
|
|
Abstract Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor (MOSFET) are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a short-channel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.
|
Received: 28 June 2014
Revised: 13 October 2014
Accepted manuscript online:
|
PACS:
|
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
|
73.61.-r
|
(Electrical properties of specific thin films)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61274112). |
Corresponding Authors:
Xu Jing-Ping
E-mail: jpxu@mail.hust.edu.cn
|
Cite this article:
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor 2015 Chin. Phys. B 24 037303
|
[1] |
Agrawal S and Fossum J G 2010 IEEE Trans. Electron Dev. 57 1069
|
[2] |
Bansal A, Paul B C and Roy K 2005 IEEE Trans. Electron Dev. 52 256
|
[3] |
Kim S H, Fossum J G and Yang J W 2006 IEEE Trans. Electron Dev. 53 2143
|
[4] |
Ji F, Xu J P, Lai P T and Li C X 2006 ICSICT'06 8th International Conference on Solid-State and Integrated Circuit Technology, October 23-26, 2006, Shanghai, China, p. 1318
|
[5] |
Kumar M J, Gupta S K and Venkataraman V 2006 IEEE Trans. Electron Dev. 53 706
|
[6] |
Wan B Y, Zhang X S and Feng Q 2012 College Physics 31 9
|
[7] |
Young K K 1989 IEEE Trans. Electron Dev. 36 399
|
[8] |
Zhu W J, Han J P and Ma T P 2004 IEEE Trans. Electron Dev. 51 98
|
[9] |
Fischetti M V, Neumayer D A and Cartier E A 2001 J. Appl. Phys. 90 4587
|
[10] |
Hutin L, Royer C L, Damlencourt J F, Hartmann J M, Grampeix H, Mazzocchi V, Tabone C, Previtali B, Pouydebasque A, Vinet M and Faynot O 2010 IEEE Electron Dev. Lett. 31 234
|
[11] |
Royer C L, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann J M, Roure M C, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M and Deleonibus S 2008 Solid State Electron. 52 1285
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|