Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(3): 038501    DOI: 10.1088/1674-1056/22/3/038501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇)
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  The tunneling field-effect transistor (TFET) is a potential candidate for the post-CMOS era. In this paper, a threshold voltage model is developed for this new kind of device. First, two-dimensional (2D) models are used to describe the distributions of potential and electric field in the channel and two depletion regions. Then based on the physical definition of threshold voltage for the nanoscale TFET, the threshold voltage model is developed. The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data. It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper. This threshold voltage model provides a valuable reference to the TFET device design, simulation, and fabrication.
Keywords:  tunnel field-effect transistor      band-to-band tunneling      subthreshold swing      gated P-I-N diode  
Received:  08 May 2012      Revised:  15 August 2012      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
Fund: Project supported by the National Ministries and Commissions, China (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2010JQ8008).
Corresponding Authors:  Li Yu-Chen     E-mail:  yuchenlee09@gmail.com

Cite this article: 

Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇) Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor 2013 Chin. Phys. B 22 038501

[1] Choi W Y, Park B G, Lee J D and Liu T J K 2007 IEEE Electron Device Lett. 28 743
[2] Zhang Q, Zhao W and Alan S 2006 IEEE Electron Device Lett. 27 297
[3] Dobrovolsky V, Rossokhaty V and Cristoloveanu S 2006 Solid-State Electronics 50 754
[4] Appenzeller J, Lin Y M, Knoch J and Avouris P 2004 Phys. Rev. Lett. 93 196805
[5] Bhuwalka K K, Schulze J and Eisele I 2005 IEEE Trans. Electron Devices 52 909
[6] Boucart K and Ionescu A M 2007 IEEE Trans. Electron Devices 54 1725
[7] Toh E H, Wang G H, Chan L, Samudra G and Yeo Y C 2007 Appl. Phys. Lett. 91 243505
[8] Toh E H, Wang G H, Chan L, Sylvester D, Heng C H, Samudra G S and Yeo Y C 2008 Jpn. J. Appl. Phys. 47 2593
[9] Saurabh S and Kumar M J 2011 IEEE Transactions on Electron Devices 58 404
[10] Zhang Z F, Zhang H M, Hu H Y, Xuan R X and Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese)
[11] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X and Shu B 2010 Chin. Phys. B 19 117309
[12] Li Y C, Zhang H M, Zhang Y M, Hu H Y, Xu X B, Qin S S and Wang G Y 2012 Acta Phys. Sin. 61 047303 (in Chinese)
[13] Li L, Liu H X and Yang Z N 2012 Acta Phys. Sin. 61 166101 (in Chinese)
[14] Boucart K and Ionescu A M 2008 Solid-State Electronics 52 1318
[15] Ionescu A M and Riel H 2011 Nature 479 329
[16] Shen C, Ong S L, Heng C H, Samudra G and Yeo Y C 2008 IEEE Electron Device Lett. 29 1252
[17] Lin S and Kuo J 2003 IEEE Trans. Electron Devices 50 2559
[18] Atlas User's Manual, Silvaco Int., Santa Clara, CA, May 26, 2006
[19] R Booth, M White, H Wong and T Krutsick 1987 IEEE Transactions on Electron Devices 34 2501
[1] Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance
Hui-Fang Xu(许会芳), Wen Sun(孙雯), and Na Wang(王娜). Chin. Phys. B, 2021, 30(7): 078503.
[2] Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Chin. Phys. B, 2021, 30(11): 118102.
[3] Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐). Chin. Phys. B, 2020, 29(5): 058501.
[4] Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance
Hui-Fang Xu(许会芳), Jian Cui(崔健), Wen Sun(孙雯), Xin-Feng Han(韩新风). Chin. Phys. B, 2019, 28(10): 108501.
[5] Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
Ru Han(韩茹), Hai-Chao Zhang(张海潮), Dang-Hui Wang(王党辉), Cui Li(李翠). Chin. Phys. B, 2019, 28(1): 018505.
[6] Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
Cong Li(李聪), Zhi-Rui Yan(闫志蕊), Yi-Qi Zhuang(庄奕琪), Xiao-Long Zhao(赵小龙), Jia-Min Guo(郭嘉敏). Chin. Phys. B, 2018, 27(7): 078502.
[7] Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures
Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌). Chin. Phys. B, 2017, 26(9): 097401.
[8] Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情). Chin. Phys. B, 2017, 26(3): 036103.
[9] Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军). Chin. Phys. B, 2017, 26(1): 018504.
[10] Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪). Chin. Phys. B, 2016, 25(2): 027701.
[11] Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-yAs heterojunction tunneling field-effect transistors
Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非). Chin. Phys. B, 2016, 25(10): 108502.
[12] Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇). Chin. Phys. B, 2015, 24(3): 037303.
No Suggested Reading articles found!