Please wait a minute...
Chin. Phys. B, 2019, Vol. 28(8): 088502    DOI: 10.1088/1674-1056/28/8/088502

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

Chao-Yang Han(韩朝阳)1,2,3, Yuan Liu(刘远)2,3, Yu-Rong Liu(刘玉荣)1, Ya-Yi Chen(陈雅怡)1,2,3, Li Wang(王黎)1,2,3, Rong-Sheng Chen(陈荣盛)1
1 School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
2 School of Automation, Guangdong University of Technology, Guangzhou 510006, China;
3 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China
Abstract  The instability of p-channel low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) is investigated under negative gate bias stress (NBS) in this work. Firstly, a series of negative bias stress experiments is performed, the significant degradation behaviors in current-voltage characteristics are observed. As the stress voltage decreases from -25 V to -37 V, the threshold voltage and the sub-threshold swing each show a continuous shift, which is induced by gate oxide trapped charges or interface state. Furthermore, low frequency noise (LFN) values in poly-Si TFTs are measured before and after negative bias stress. The flat-band voltage spectral density is extracted, and the trap concentration located near the Si/SiO2 interface is also calculated. Finally, the degradation mechanism is discussed based on the current-voltage and LFN results in poly-Si TFTs under NBS, finding out that Si-OH bonds may be broken and form Si* and negative charge OH- under negative bias stress, which is demonstrated by the proposed negative charge generation model.
Keywords:  polycrystalline silicon      thin film transistor      negative bias stress      low frequency noise  
Received:  24 January 2019      Revised:  17 May 2019      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.40.Qx (Microcircuit quality, noise, performance, and failure analysis)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61574048), the Pearl River Science and Technology Nova Program of Guangzhou City, China (Grant No. 201710010172), the International Science and Technology Cooperation Program of Guangzhou City (Grant No. 201807010006), the International Cooperation Program of Guangdong Province, China (Grant No. 2018A050506044), and the Opening Fund of Key Laboratory of Silicon Device Technology, China (Grant No. KLSDTJJ2018-6).
Corresponding Authors:  Yuan Liu     E-mail:

Cite this article: 

Chao-Yang Han(韩朝阳), Yuan Liu(刘远), Yu-Rong Liu(刘玉荣), Ya-Yi Chen(陈雅怡), Li Wang(王黎), Rong-Sheng Chen(陈荣盛) Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors 2019 Chin. Phys. B 28 088502

[38] Liu Y, Chen R S, Li B, En Y F and Chen Y Q 2018 IEEE Trans. Electron. Dev. 65 356
[1] Maiolo L, Pecora A, Maita F, Minotti A, Zampetti E, Pantalei S, Macagnano A, Bearzotti A, Ricci D and Fortunato G 2013 Sen. Actuators B 179 114
[2] Fortunato E, Barquinha P and Martins R 2012 Adv. Mater. 24 2945
[3] Ho C, Panagopoulos G and Roy K 2013 IEEE Trans. Electron. Dev. 60 288
[4] Yan B, Yang J, Xia Z, Liu X, Du G, Han R, Kang J, Liao C C, Gan Z, Liao M, Wang J P and Wong W 2008 IEEE T. Nanotechnol. 7 418
[5] Zhou D, Wang M and Zhang S 2011 IEEE Trans. Electron. Dev. 58 3422
[6] Tai Y H, Chiu H L and Chou L S 2013 J. Disp. Technol. 9 613
[7] Chang G W, Chang T C, Jhu J C, Tsai T M, Chang K C, Syu Y E, Tai Y H, Jian F Y and Hung Y C 2014 IEEE Trans. Electron. Dev. 61 2119
[8] Son K S, Kim H S, Maeng W J, Lee K H, Kim T S, Park J S, Kwon J Y, Koo B and Lee S Y 2011 IEEE Electron. Dev. Lett. 32 164
[9] Mishra R, Mitra S and Gauthier R 2008 IEEE Electron. Dev. Lett. 29 262
[10] Jo M, Chang M, Kim S, Jung S, Park J B, Lee J, Seong D J and Hwang H 2009 IEEE Electron. Dev. Lett. 30 1194
[11] Zhou J, Wang M and Wong M 2011 IEEE Trans. Electron. Dev. 58 3034
[12] Cho E N, Kang J H, Kim C E and Moon P 2011 IEEE Trans. Dev. Mater. Reliab. 11 112
[13] Ma M W, Chen C Y, Wu W C, Su C J, Kao K H, Chao T S and Lei T F 2008 IEEE Trans. Electron. Dev. 55 1153
[14] Wang R S, Huang R, He Y D, Wang Z H, Jia G S, Kim W D, Park D G and Wang Y Y 2008 IEEE Electron. Dev. Lett. 29 242
[15] Xiong N, Xiao P, Li M, Xu H, Yao R H, Wen S S and Peng J B 2013 Appl. Phys. Lett. 102 242102
[16] Hu H H, Jheng Y R, Wu Y C, Hung M F and Huang G W 2012 IEEE Electron. Dev. Lett. 33 1276
[17] Pichon L, Boukhenoufa A, Cordier C and Cretu B 2007 IEEE Electron. Dev. Lett. 28 716
[18] Liu Y, He H Y, Chen R S, En Y F, Li B and Chen Y Q 2018 IEEE J. Electron Dev. Soc. 6 271
[19] Liu Y, He H Y, Chen Y Y, Chen R, Wang L and Cai S T 2019 IEEE Trans. Electron Dev. 66 2192
[20] Hu C F, Wang M X, Zhang B and Wong M 2009 IEEE Trans. Electron. Dev. 56 587
[21] Chen C Y, Lee J W, Wang S D, Shieh, M S, Lee P H, Chen W C, Lin H Y, Yeh K L and Lei T F 2006 IEEE Trans. Electron. Dev. 53 2993
[22] Maeda S, Maegawa S, Ipposhi T, Nishimura H, Ichiki T, Mitsuhashi J, Ashida M, Muragishi T, Inou, Y and Nishimura T 1994 J. Appl. Phys. 76 8160
[23] Gleskova H and Wagner S 2001 IEEE Trans. Electron. Dev. 48 1667
[24] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E and Paillet P 2008 IEEE Trans. Nucl. Sci. 55 1833
[25] Liu Y, Chen H B, Liu Y R, Wang X, En Y F, Li B and Lu Y D 2015 Chin. Phys. B 24 088503
[26] Doremus R H 1976 J. Phys. Chem. 80 1773
[27] Yamamoto T, Uwasawa K and Mogami T 1999 IEEE Trans. Electron. Dev. 46 921
[28] Ristić G S, Pejović M M and Jakšić A B 2000 J. Appl. Phys. 87 3468
[29] Wang L, Liu Y, Geng K W, Chen Y Y and En Y F 2018 Chin. Phys. B 27 068504
[30] Hooge F N 1994 IEEE Trans. Electron. Dev. 41 1926
[31] McWhorter A L, Meyer J W and Strum P D 1957 Phys. Rev. 108 1642
[32] Ghibaudo G, Roux O 1991 Phys. Status Solidi A 124 571
[33] Dimitriadis C A, Kamarinos G and Brini J 2001 IEEE Electron. Dev. Lett. 22 381
[34] Wang M X and Wang M 2014 IEEE Trans. Electron Dev. 61 3258
[35] Jomaah J and Balestra F 2004 Proc. Inst. Elect. Eng.-Circuits Devices Syst. 151 111
[36] Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis C A, Templier F and Kamarinos G 2010 J. Appl. Phys. 108 106103
[37] Liu Y, Cai S T, Han C Y, Chen Y Y, Wang L, Xiong X M and Chen R S 2019 IEEE J. Electron. Dev. Soc. 7 203
[38] Liu Y, Chen R S, Li B, En Y F and Chen Y Q 2018 IEEE Trans. Electron. Dev. 65 356
[1] Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress
Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Chin. Phys. B, 2022, 31(12): 128105.
[2] Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Chin. Phys. B, 2021, 30(11): 118102.
[3] High-throughput fabrication and semi-automated characterization of oxide thin film transistors
Yanbing Han(韩炎兵), Sage Bauers, Qun Zhang(张群), Andriy Zakutayev. Chin. Phys. B, 2020, 29(1): 018502.
[4] Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙). Chin. Phys. B, 2019, 28(8): 087302.
[5] Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors
Li Wang(王黎), Yuan Liu(刘远), Kui-Wei Geng(耿魁伟), Ya-Yi Chen(陈雅怡), Yun-Fei En(恩云飞). Chin. Phys. B, 2018, 27(6): 068504.
[6] Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
Shuai Jiang(姜帅), Rui Jia(贾锐), Ke Tao(陶科), Caixia Hou(侯彩霞), Hengchao Sun(孙恒超), Zhiyong Yu(于志泳), Yongtao Li(李勇滔). Chin. Phys. B, 2017, 26(8): 087802.
[7] Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors
Dong-Yu Qi(齐栋宇), Dong-Li Zhang(张冬利), Ming-Xiang Wang(王明湘). Chin. Phys. B, 2017, 26(12): 128101.
[8] Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Yu-Rong Liu(刘玉荣), Gao-Wei Zhao(赵高位), Pai-To Lai(黎沛涛), Ruo-He Yao(姚若河). Chin. Phys. B, 2016, 25(8): 088503.
[9] Technology demonstration of a novel poly-Si nanowire thin film transistor
Libin Liu(刘立滨), Renrong Liang(梁仁荣), Bolin Shan(单柏霖), Jun Xu(许军), Jing Wang(王敬). Chin. Phys. B, 2016, 25(11): 118504.
[10] Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces
Xie Ying-Tao (谢应涛), Ouyang Shi-Hong (欧阳世宏), Wang Dong-Ping (王东平), Zhu Da-Long (朱大龙), Xu Xin (许鑫), Tan Te (谭特), Fong Hon-Hang (方汉铿). Chin. Phys. B, 2015, 24(9): 096803.
[11] Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Liu Yuan (刘远), Chen Hai-Bo (陈海波), Liu Yu-Rong (刘玉荣), Wang Xin (王信), En Yun-Fei (恩云飞), Li Bin (李斌), Lu Yu-Dong (陆裕东). Chin. Phys. B, 2015, 24(8): 088503.
[12] Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress
Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明). Chin. Phys. B, 2015, 24(8): 088504.
[13] 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
Yuan Hao (袁昊), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Yang Fei (杨霏), Wu Hao (吴昊). Chin. Phys. B, 2014, 23(5): 057102.
[14] Investigation on the intensity noise characteristics of the semiconductor ring laser
Kang Ze-Xin (康泽新), Cai Xin-Lun (蔡鑫伦), Wen Xiao-Dong (温晓东), Liu Chao (刘超), Jian Shui-Sheng (简水生), Yu Si-Yuan (余思远). Chin. Phys. B, 2014, 23(2): 024203.
[15] High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)
Liu Yu-Rong (刘玉荣), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河 ). Chin. Phys. B, 2012, 21(8): 088503.
No Suggested Reading articles found!