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Chin. Phys. B, 2022, Vol. 31(8): 088101    DOI: 10.1088/1674-1056/ac673e

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

Tianyuan Song(宋天源)1, Dongli Zhang(张冬利)1,†, Mingxiang Wang(王明湘)1, and Qi Shan(单奇)2
1 School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China;
2 Visionox Technology Co., Ltd, Suzhou 215006, China
Abstract  Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated, and the corresponding degradation mechanism is proposed and verified. The maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same time. Trapping of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying mechanism. The observed degradation phenomena, including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale, current crowding in the output curve, and smaller degradation in transfer curves measured under large drain bias, can all be well explained with the proposed degradation mechanism.
Keywords:  a-IGZO      thin-film transistors      hot-carrier effects  
Received:  05 January 2022      Revised:  11 April 2022      Accepted manuscript online:  14 April 2022
PACS:  81.05.Gc (Amorphous semiconductors)  
  81.05.Ea (III-V semiconductors)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61971299 and 61974101), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20201201), the Fund from Suzhou Science and Technology Bureau (Grant No. SYG201933), and the Fund from the State Key Laboratory of ASIC and System, Fudan University, (Grant No. 2021KF005).
Corresponding Authors:  Dongli Zhang     E-mail:

Cite this article: 

Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇) Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases 2022 Chin. Phys. B 31 088101

[1] Kamiya T, Nomura K and Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305
[2] Lee J M, Cho I T, Lee J H and Kwon H I 2008 Appl. Phys. Lett. 93 093504
[3] Cho E N, Kang J H, Kim C E, Moon P and Yun I 2011 IEEE Transactions on Device and Materials Reliability 11 112
[4] Ji K H, Kim J I, Mo Y G, Jeong J H, Yang S, Hwang C S, Park S H K, Ryu M K, Lee S Y and Jeong J K 2010 IEEE Electron Dev. Lett. 31 1404
[5] Ji K H, Kim J I, Jung H Y, Park S Y, Choi R, Kim U K, Hwang C S, Lee D, Hwang H and Jeong J K 2011 Appl. Phys. Lett. 98 103509
[6] Wang L, Liu Y, Geng K W, Chen Y Y and En Y F 2018 Chin. Phys. B 27 068504
[7] Urakawa S, Tomai S, Ueoka Y, Yamazaki H, Kasami M, Yano K, Wang D, Furuta M, Horita M, Ishikawa Y and Uraoka Y 2013 Appl. Phys. Lett. 102 053506
[8] Lee S W, Jeon P J, Choi K, Min S W, Kwon H and Im S 2015 IEEE Electron Dev. Lett. 36 472
[9] Zhang D, Wu C, Xu W, Ren F, Zhou D, Yu P, Zhang R, Zheng Y and Lu H 2019 Chin. Phys. B 28 017303
[10] Liu F, Zhou Y, Yang H, Zhou X, Zhang X, Li G, Zhang M, Zhang S and Lu L 2022 IEEE Electron Dev. Lett. 43 40
[11] Wei L, Locatelli M L, Diaham S, Pham C D, Grosset G and Dupuy L 2016 IEEE International Conference on Dielectrics (ICD) pp. 1061-1064
[12] Hsieh T Y, Chang T C, Chen T C, Chen Y T, Tsai M Y, Chu A K, Chung Y C, Ting H C and Chen C Y 2012 IEEE Trans. Electron Dev. 59 3389
[13] Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502
[14] Liu T, Aygun L E, Wagner S and Sturm J C 2016 IEEE Transactions on Device and Materials Reliability 16 243
[15] Lee J M, Cho I T, Lee J H, Cheong W S, Hwang C S and Kwon H I 2009 Appl. Phys. Lett. 94 222112
[16] Powell M J 1983 Appl. Phys. Lett. 43 597
[17] Wang S, Wang M, Zhang D and Shan Q 2018 IEEE Trans. Electron Dev. 65 995
[18] Song T, Zhang D and Wang M 2021 IEEE Electron Dev. Lett. 42 1623
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