Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

doi:10.1088/1674-1056/28/1/018504

Abstract

Gallium oxide (Ga₂O₃) thin films were deposited on a-Al₂O₃ (1120) substrates by pulsed laser deposition (PLD) with different oxygen pressures at 650℃. By reducing the oxygen pressure, mixed-phase Ga₂O₃ films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga₂O₃ thin film solar-blind photodetectors (SBPDs) were prepared. Comparing the responsivities of the mixed-phase Ga₂O₃ SBPDs and the single β-Ga₂O₃ SBPDs at a bias voltage of 25 V, it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga₂O₃ thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga₂O₃ thin film SBPDs.

Keywords: Ga₂O₃ mixed-phase solar-blind photodetector pulsed laser deposition

Received: 22 August 2018
Revised: 07 November 2018
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	81.15.Fg	(Pulsed laser ablation deposition)
	81.10.Pq	(Growth in vacuum)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 51872187, 51302174, 11774241, and 61704111), the National Key Research and Development Program of China (Grant No. 2017YFB0400304), the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2016A030313060 and 2017A030310524), the Project of Department of Education of Guangdong Province, China (Grant No. 2014KTSCX110), the Fundamental Research Project of Shenzhen, China (Grant No. JCYJ20180206162132006), and the Science and Technology Foundation of Shenzhen, China (Grant No. JCYJ2015-2018).

Corresponding Authors: Y M Lu
E-mail: ymlu@szu.edu.cn

Cite this article:

Y M Lu(吕有明), C Li(李超), X H Chen(陈相和), S Han(韩瞬), P J Cao(曹培江), F Jia(贾芳), Y X Zeng(曾玉祥), X K Liu(刘新科), W Y Xu(许望颖), W J Liu(柳文军), D L Zhu(朱德亮) Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition 2019 Chin. Phys. B 28 018504

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Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

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Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition