A synaptic transistor with NdNiO3

doi:10.1088/1674-1056/aba60c

Abstract Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO₃ epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H⁺ ions in the NdNiO₃ channel through electrolyte gating. The non-volatile conductance change reached 10⁴ under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO₃ artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO₃ has great potential for applications in neuromorphic devices.

Keywords: pulsed laser deposition synaptic transistor electrolyte gating artificial synapse NdNiO₃

Received: 09 May 2020
Revised: 21 June 2020
Accepted manuscript online: 15 July 2020

PACS:	81.15.Fg	(Pulsed laser ablation deposition)
	84.35.+i	(Neural networks)
	85.30.Tv	(Field effect devices)
	87.19.L-	(Neuroscience)

Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0303604 and 2019YFA0308500), the National Natural Science Foundation of China (Grant Nos. 11674385, 11404380, 11721404, and 11874412), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018008), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDJSSW-SLH020).

Corresponding Authors: Chen Ge, Kui-Juan Jin
E-mail: gechen@iphy.ac.cn;kjjin@iphy.ac.cn

Cite this article:

Xiang Wang(汪翔), Chen Ge(葛琛), Ge Li(李格), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Kui-Juan Jin(金奎娟) A synaptic transistor with NdNiO₃ 2020 Chin. Phys. B 29 098101

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A synaptic transistor with NdNiO₃