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Chin. Phys. B, 2020, Vol. 29(2): 028501    DOI: 10.1088/1674-1056/ab5f01

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor

Xian-Cheng Liu(刘先程)1, Jia-Jun Ma(马佳俊)1, Hong-Yun Xie(谢红云)1, Pei Ma(马佩)1, Liang Chen(陈亮)2, Min Guo(郭敏)1, Wan-Rong Zhang(张万荣)1
1 Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China;
2 College of Physics and Electronic Engineering, Taishan University, Taian 271000, China
Abstract  The effects of buried oxide (BOX) layer on the capacitance of SiGe heterojunction photo-transistor (HPT), including the collector-substrate capacitance, the base-collector capacitance, and the base-emitter capacitance, are studied by using a silicon-on-insulator (SOI) substrate as compared with the devices on native Si substrates. By introducing the BOX layer into Si-based SiGe HPT, the maximum photo-characteristic frequency ft, opt of SOI-based SiGe HPT reaches up to 24.51 GHz, which is 1.5 times higher than the value obtained from Si-based SiGe HPT. In addition, the maximum optical cut-off frequency fβ, opt, namely its 3-dB bandwidth, reaches up to 1.13 GHz, improved by 1.18 times. However, with the increase of optical power or collector current, this improvement on the frequency characteristic from BOX layer becomes less dominant as confirmed by reducing the 3-dB bandwidth of SOI-based SiGe HPT which approaches to the 3-dB bandwidth of Si-based SiGe HPT at higher injection conditions.
Keywords:  silicon-on-insulator (SOI)      SiGe heterojunction photo-transistor (HPT)      characteristic frequency      3-dB bandwidth  
Received:  21 August 2019      Revised:  21 November 2019      Accepted manuscript online: 
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  78.66.Nk (Insulators)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61604106, 61774012, and 61901010), the Beijing Future Chip Technology High Precision Innovation Center Research Fund, China (Grant No. KYJJ2016008), the Beijing Municipal Natural Science Foundation, China (Grant No. 4192014), and the Municipal Natural Science Foundation of Shangdong Province, China (Grant No. ZR2014FL025).
Corresponding Authors:  Hong-Yun Xie     E-mail:

Cite this article: 

Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣) Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor 2020 Chin. Phys. B 29 028501

[1] Li H, Niu P J, Li J Y and Zhang Y 2006 Elec-Optic. Technol. Appl. 21 18
[2] Li C, Xue C L, Liu Z, Cheng B W and Wang Q M 2014 Chin. Phys. B 23 038507
[3] Ma P C, Sun X, Liu F M, Xue H Y, Sun Y, He H M, Li Z X and Cao L Q 2019 Study Opt. Commun. 3 26
[4] Liu Y L, Yu C C, Lin K T, Yang T C, Wang E Y, Chen H L, Chen L C and Chen K H 2015 ACS Nano 9 5093
[5] Rachel W and Mario P 2010 Nat. Photon. 4 498
[6] Xue H Y, Xue C L, Cheng B W, Yu Y D and Wang Q M 2009 Chin. Phys. B 18 2542
[7] Rosales M D, Schiellein J, Viana C, Polleux J L and Algani C 2012 The 9th International Conference on Group I V Photonics (GFP), August 29-31, 2012, San Diego, CA, USA, pp. 294-296
[8] Hsu K Y J and Liao B W C 2013 IEEE International Conference of Electron Devices and Solid-state Circuits, June 3-5, 2013, Hong Kong, China, pp. 1-12
[9] Tegegne Z G, Viana C, Rosales M, Polleux J L, Algani C, Grzeskowiak M and Richalot E 2015 International Topical Meeting on Microwave Photonics (MWP), October 26-29, 2015, Paphos, Cyprus, pp. 1-4
[10] Tegegne Z G, Viana C, Polleux J L, Grzeskowiak M and Richalot E 2016 Silicon Photon. XI February 15-17, 2016, San Francisco, CA, USA, 975219
[11] Tegegne Z G, Viana C, Rosales M D, Schiellein J, Polleux J L, Grzeskowiak M, Richalot E and Algani C 2017 Int. J. Microw. Wirel. T. 9 17
[12] Varadharajaperumal M, Niu G F, Cressler J D, Reed R A and Marshall P W 2004 IEEE Trans. Nucl. Sci. 51 3298
[13] Li C, Xue C L, Liu Z, Cong H, Cheng B W, Hu Z H, Guo X and Liu W M 2016 Sci. Rep. UK 6 27743
[14] Sun D, Xie H Y, Liu R, Liu S, Wu J H and Zhang W R 2017 Acta Photon. Sin. 46 49
[15] Liu S, Xie H Y, Sun D, Liu R, Wu J H and Zhang W R 2017 J. Infrared Millim. Waves 36 594
[16] Jiang Z Y 2015 Research on high frequency feature of InP-based uni-traveling-carrier double heterojunction phototransistor (MS Dissertation) (Beijing: Beijing University of Technology) (in Chinese)
[17] Neamen D A 2013 Smiconductor Physics and Devices Bssic Principles, 4th edn. (Beijing: Publishing House of Electronics Industry) pp. 384-385
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