Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors

doi:10.1088/1674-1056/25/9/096110

Abstract The total ionizing dose (TID) response of 65-nm CMOS transistors is studied by 10-keV x-ray and 3-MeV protons up to 1 Grad (SiO₂) total dose. The degradation levels induced by the two radiation sources are different to some extent. The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons. The holes' recombination also contributes to the difference. Compared to these two mechanisms, the influence of the dose rate is negligible.

Keywords: total ionizing dose (TID) effects grad dose x-ray and protons 65-nm CMOS transistors

Received: 02 January 2016
Revised: 09 May 2016
Accepted manuscript online:

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Corresponding Authors: Lili Ding
E-mail: lili03.ding@126.com

Cite this article:

Lili Ding(丁李利), Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors 2016 Chin. Phys. B 25 096110

[1]	Oldham T R and McGarrity J M 1983 IEEE Trans. Nucl. Sci. NS-30 4377
[2]	Dozier C M and Brown D B 1981 IEEE Trans. Nucl. Sci. NS-28 4137
[3]	Paillet P, Schwank J R, Shaneyfelt M R, Ferlet-Cavrois V, Jones R L, Flarrient O and Blackmore E W 2002 IEEE Trans. Nucl. Sci. 49 2656
[4]	Dozier C M and Brown D B 1983 IEEE Trans. Nucl. Sci. NS-30 4382
[5]	Oldham T R, Bennett K W, Beaucour J, Carriere T, Poivey C and Garnier P 1993 IEEE Trans. Nucl. Sci. 40 1820
[6]	Schwank J R, Sexton F W, Shaneyfelt M R and Fleetwood D M 2007 IEEE Trans. Nucl. Sci. 54 1042
[7]	Pease R L, Simons M and Marshall P 2001 IEEE Trans. Nucl. Sci. 48 908
[8]	Bi J S, Han Z S, Zhang E X, McCurdy M W, Reed R A, Schrimpf R D, Fleetwood D M, Alles M L, Weller R A, Linten D, Jurczak M and Fantini A 2013 IEEE Trans. Nucl. Sci. 60 4540
[9]	Wrachien N, Cester A, Portoghese R and Gerardi C 2008 IEEE Trans. Nucl. Sci. 55 3000
[10]	Najafizadeh L, Sutton A K, Diestelhorst R M, Bellini M, Jun B, Cressler J D, Marshall P D and Marshall C J 2007 IEEE Trans. Nucl. Sci. 54 2238
[11]	Faccio F 2004 Int. J. High Speed Electron. Syst. 14 379
[12]	Ding L, Gerardin S, Bagatin M, Bisello D, Mattiazzo S and Paccagnella A 2015 Nuclear Inst. Meth. Phys. Res. A 796 104
[13]	Faccio F and Cervelli G 2005 IEEE Trans. Nucl. Sci. 52 2413
[14]	Cellere G, Paccagnella A, Visconti A, Bonanomi M, Candelori A and Lora S 2005 IEEE Trans. Nucl. Sci. 52 2372
[15]	Schwank J R, Sexton F W, Shaneyfelt M R and Fleetwood D M 2007 IEEE Trans. Nucl. Sci. 54 1042

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Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors

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