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Chin. Phys. B, 2018, Vol. 27(2): 028501    DOI: 10.1088/1674-1056/27/2/028501

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Meng-Ying Zhang(张梦映)1,2, Zhi-Yuan Hu(胡志远)1, Da-Wei Bi(毕大炜)1, Li-Hua Dai(戴丽华)1,2, Zheng-Xuan Zhang(张正选)1
1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator (PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect (RINCE). The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
Keywords:  partiallydepleted silicon-on-insulator (PD SOI)      totalionizingdose (TID)      radiationinduced narrow channel effect (RINCE)      drain induced barrier lowering (DIBL) effect  
Received:  31 August 2017      Revised:  08 November 2017      Accepted manuscript online: 
PACS:  85.30.-z (Semiconductor devices)  
  61.80.-x (Physical radiation effects, radiation damage)  
  07.87.+v (Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Weapon Equipment Pre-Research Foundation of China (Grant No. 9140A11020114ZK34147) and the Shanghai Municipal Natural Science Foundation, China (Grant No. 15ZR1447100).
Corresponding Authors:  Meng-Ying Zhang     E-mail:
About author:  85.30.-z; 61.80.-x; 07.87.+v; 85.30.De

Cite this article: 

Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选) Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation 2018 Chin. Phys. B 27 028501

[1] Auberton-Herve A J 1996 International Electron Devices Meeting, December 8-11, 1996, San Francisco, CA, USA, p. 3
[2] Schwank J R 1997 Microelectron. Eng. 36 335342
[3] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[4] Snoeys W et al. 2000 Nucl. Instrum. Method Phys. Res. A 439 349
[5] Saks N S, Ancona M G and Modolo J A 1984 IEEE Trans. Nucl. Sci. 31 1249
[6] Faccio F and Cervelli G 2005 IEEE Trans. Nucl. Sci. 52 2413
[7] Chen J Y, Henderson R C, Martin R and Patterson D O 1982 IEEE Trans. Nucl. Sci. 29 1681
[8] Gaillardin M, Goiffon V, Girard S, Martinez M, Magnan P and Paillet P 2011 IEEE Trans. Nucl. Sci. 58 2807
[9] Faccio F, Michelis S, Cornale D, Paccagnella A and Gerardin S 2015 IEEE Trans. Nucl. Sci. 62 2933
[10] Bezhenova V and Michalowska-Forsyth V 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility, May 17-21, 2016, Shenzhen, China, p. 366
[11] Huang H X, Bi D W, Peng C, Zhang Y W and Zhang Z X 2013 Chin. Phys. Lett. 30 080701
[12] Peng C, Hu Z, Zhang Z, Huang H, Ning B and Bi D 2014 Nucl. Instrum. Method Phys. Res. A 748 7078
[13] Ning B, Bi D, Huang H, Zhang Z, Chen M and Zou S 2013 Microelectron. J. 44 8693
[14] Turowski M, Raman A and Schrimpf R D 2004 IEEE Trans. Nucl. Sci. 51 3166
[15] Ortiz-Conde A, García Sánchez F J, Liou J J, Cerdeira A, Estrada M and Yue Y 2002 Microelectron. Reliab. 42 583
[16] Alles M L, Hughes H L, Ball D R, McMarr P J and Schrimpf R D 2014 IEEE Trans. Nucl. Sci. 61 2945
[17] Zhang M Y, Hu Z Y, Zhang Z X, Fan S, Dai L H, Liu X N and Song L 2017 Chin. Phys. Lett. 34 088501
[18] Ning B, Bi D, Huang H, Zhang Z, Hu Z, Chen M and Zou S 2013 Microelectron. Reliab. 53 259
[19] Fan S, Ning B, Hu Z, Zhang Z, Bi D, Peng C, Song L and Dai L 2016 Microelectron. Reliab. 56 19
[20] Neamen D A 2011 Semiconductor physics and devices:basic principles, 4th edn. (New York:McGraw-Hill) pp. 385-390
[21] Youk G U, Khare P S, Schrimpf R D, Massengill L W and Galloway K F 1999 IEEE Trans. Nucl. Sci. 46 1830
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