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Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs |
| Shuang Fan(樊双)1,2, Zhi-Yuan Hu(胡志远)1, Zheng-Xuan Zhang(张正选)1, Bing-Xu Ning(宁冰旭)1, Da-Wei Bi(毕大炜)1, Li-Hua Dai(戴丽华)1,2, Meng-Ying Zhang(张梦映)1,2, Le-Qing Zhang(张乐情)1,2 |
1 The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator (PDSOI) NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling (BBT) has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide (BOX) contributes a lot to the latchup effect.
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Received: 19 July 2016
Revised: 28 December 2016
Accepted manuscript online:
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PACS:
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61.82.-d
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(Radiation effects on specific materials)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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94.20.wq
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(Solar radiation and cosmic ray effects)
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| Fund: Project supported by Shanghai Municipal Natural Science Foundation, China (Grant No. 15ZR1447100). |
Corresponding Authors:
Zhi-Yuan Hu
E-mail: zyhu@mail.sim.ac.cn
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Cite this article:
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情) Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs 2017 Chin. Phys. B 26 036103
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