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Chin. Phys. B, 2016, Vol. 25(9): 096109    DOI: 10.1088/1674-1056/25/9/096109

Pattern dependence in synergistic effects of total dose onsingle-event upset hardness

Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明)
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China
Abstract  The pattern dependence in synergistic effects was studied in a 0.18 μ static random access memory (SRAM) circuit. Experiments were performed under two SEU test environments: 3 MeV protons and heavy ions. Measured results show different trends. In heavy ion SEU test, the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array. TCAD simulation was performed. TID-induced degradation in nMOSFETs mainly induced the imprint effect in the SRAM cell, which is consistent with the measured results under the proton environment, but cannot explain the phenomena observed under heavy ion environment. A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.
Keywords:  pattern dependence      total dose      single event upset (SEU)      static random access memory (SRAM)  
Received:  02 January 2016      Revised:  08 May 2016      Accepted manuscript online: 
PACS:  61.80.-x (Physical radiation effects, radiation damage)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. U1532261).
Corresponding Authors:  Hongxia Guo     E-mail:

Cite this article: 

Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明) Pattern dependence in synergistic effects of total dose onsingle-event upset hardness 2016 Chin. Phys. B 25 096109

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