An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

doi:10.1088/1674-1056/25/4/047305

Abstract In this paper, the three-dimensional (3D) coupling effect is discussed for nanowire junctionless silicon-on-insulator (SOI) FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the lateral gates increases and therefore the influence of back gate on the threshold voltage weakens. For a narrow and tall fin, the lateral gates mainly control the channel and therefore the effect of back gate decreases. A simple two-dimensional (2D) potential model is proposed for the subthreshold region of junctionless SOI FinFET. TCAD simulations validate our model. It can be used to extract the threshold voltage and doping concentration. In addition, the tuning of back gate on the threshold voltage can be predicted.

Keywords: coupling effect threshold voltage subthreshold region SOI FinFETs junctionless front gate lateral gate back gate

Received: 25 October 2015
Revised: 26 December 2015
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.-z	(Semiconductor devices)
	77.55.df	(For silicon electronics)

Fund: Project supported by the Research Program of the National University of Defense Technology (Grant No. JC 13-06-04).

Corresponding Authors: Fan-Yu Liu
E-mail: liufanyu986412@hotmail.com

Cite this article:

Fan-Yu Liu(刘凡宇), Heng-Zhu Liu(刘衡竹), Bi-Wei Liu(刘必慰), Yu-Feng Guo(郭宇峰) An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect 2016 Chin. Phys. B 25 047305

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An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

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