| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect |
| Bin Wang(王斌)1,†, Xin-Long Shi(史鑫龙)1, Yun-Feng Zhang(张云峰)1, Yi Chen(陈伊)1, 2, Hui-Yong Hu(胡辉勇)1, and Li-Ming Wang(王利明)1 |
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1 State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Mailbox 150, BaoJi 721000, China
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Abstract A novel n-type junctionless field-effect transistor (JLFET) with a step-gate-oxide (SGO) structure is proposed to suppress the gate-induced drain leakage (GIDL) effect and off-state current I off. Introducing a 6-nm-thick tunnel-gate-oxide and maintaining 3-nm-thick control-gate-oxide, lateral band-to-band tunneling (L-BTBT) width is enlarged and its tunneling probability is reduced at the channel-drain surface, leading the off-state current Ioff to decrease finally. Also, the thicker tunnel-gate-oxide can reduce the influence on the total gate capacitance of JLFET, which could alleviate the capacitive load of the transistor in the circuit applications. Sentaurus simulation shows that Ioff of the new optimized JLFET reduced significantly with little impaction on its on-state current I on and threshold voltage V TH becoming less, thus showing an improved Ion/Ioff ratio (5×104) and subthreshold swing (84 mV/dec), compared with the scenario of the normal JLFET. The influence of the thickness and length of SGO structure on the performance of JLFET are discussed in detail, which could provide useful instruction for the device design.
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Received: 17 August 2020
Revised: 07 December 2020
Accepted manuscript online: 11 December 2020
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PACS:
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74.55.+v
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(Tunneling phenomena: single particle tunneling and STM)
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61704130) and the Fund from the Science and Technology on Analog Integrated Circuit Laboratory, China (Grant No. JCKY2019210C029). |
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Corresponding Authors:
†Corresponding author. E-mail: wbin@xidian.edu.cn
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Cite this article:
Bin Wang(王斌), Xin-Long Shi(史鑫龙), Yun-Feng Zhang(张云峰), Yi Chen(陈伊), Hui-Yong Hu(胡辉勇), and Li-Ming Wang(王利明) Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect 2021 Chin. Phys. B 30 047401
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1 Colinge J P, Lee C W, Afzalian A, et al. 2010 Nat. Nanotechnol. 5 225
2 Bahniman G, Punyasloka B and Partha M 2013 J. Comput. Electron. 12 428
3 Li C, Zhuang Y Q, Zhang L and Jin G 2014 Chin. Phys. B 23 038502
4 Wang H, Han W H, Zhao X S, Zhang W, Lv Q F, Ma L H and Yang F H 2016 Chin. Phys. B 25 0108102
5 Farhad L, Arash D and Sawal H2014 Plos ONE 9 e95182
6 Leung G, Pan A and Chui C2015 IEEE Trans. Electron Dev. 62 3208
7 Han M H, Chang C Y, Jhan Y R, Wu J J, Chen H B, Cheng Y C and Wu Y C 2013 IEEE Electron Dev. Lett. 34 157
8 Migita S, Morita Y, Matsukawa T, Masahara M and Ota H 2014 IEEE Trans. Nanotechnol. 13 208
9 Jhan Y R, Thirunavukkarasu V, Wang C P and Wu Y C2015 IEEE Electron Dev. Lett. 36 654
10 Gupta M, Kranti A2015 ECS Trans. 66 2285
11 Lucian B, Farzan J, Didier B and Jean-Michel S 2013 IEEE Trans. Electron Dev. 60 2080
12 Shibir B, Pranav K A, Yogesh G and Bahniman G 2015 Appl. Phys. A 118 1527
13 Sahay S and Kumar M 2017 IEEE Trans. Electron Dev. 64 1330
14 Sahay S and Kumar M 2016 IEEE Trans. Electron Dev. 63 4138
15 Sahay S and Kumar M 2017 IEEE Trans. Electron Dev. 64 2604
16 Gundapaneni S, Bajaj M, Pandy P, Murali K, Ganguly S and Kottantharayil A 2012 IEEE Trans. Electron Dev. 59 1023
17 Thirunavukkarasu V, Jhan Y, Liu Y and Wu Y 2015 IEEE Electron Dev. Lett. 36 645
18 Sahay S and Kumar M 2017 IEEE Access. 5 18918
19 Kumar M and Sahay S2016 IEEE Trans. Electron Dev. 63 3250
20 Sahay S and Kumar M 2015 IEEE Trans. Electron Dev. 62 3882
21 Ghosh B, Mondal P, Akram M W, Bal P and Salimath A K2014 J. Semiconduct. 35 064001
22 Sahay S and Kumar M2016 IEEE Trans. Electron Dev. 63 3790
23 Lahgere A and Kumar M J 2017 IEEE Trans. Electron Dev. 64 3470
24 Wang B, Zhang H, Hu H and Shi X 2018 Chin. Phys. B 27 067402
25 Liu X Y, Hu H Y, Wang B, Wang M, Han G Q, Cui S M and Zhang H M 2017 Superlatt. Microstruct. 102 7
26 Sahay S and Kumar M2019 Junctionless Field-effect Transistors (Wiley: IEEE Press)
27 Rudendko T, Nazarov A, Barraud S, Kilchytska V and Flandre D 2020 Solid State Electron. 168 107723 |
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