Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

doi:10.1088/1674-1056/25/4/047306

Abstract The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation-recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equations are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO₂ thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance (MR) can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.

Keywords: magnetoresistance p-n junction newton iteration

Received: 23 September 2015
Revised: 07 December 2015
Accepted manuscript online:

PACS:	73.43.Qt	(Magnetoresistance)
	75.40.Mg	(Numerical simulation studies)
	02.60.Cb	(Numerical simulation; solution of equations)

Corresponding Authors: Jian-Hong Yang
E-mail: yangjh@lzu.edu.cn

Cite this article:

Pan Yang(杨盼), Wen-Jie Chen(谌文杰), Jiao Wang(王娇), Zhao-Wen Yan(闫兆文), Jian-Li Qiao(乔坚栗), Tong Xiao(肖彤), Xin Wang(王欣), Zheng-Peng Pang(庞正鹏), Jian-Hong Yang(杨建红) Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction 2016 Chin. Phys. B 25 047306

[1]	Yang D Z, Wang F C, Ren Y, Zuo Y L, Peng Y, Zhou S M and Xue D S 2013 Adv. Funct. Mater. 23 2918
[2]	Sun Z G, Mizuguchi M, Manago T and Akinaga H 2004 Appl. Phys. Lett. 85 5643
[3]	Zhao J J, Lu Y, Haosibayar, Ru X, Yang R F, Li Q A, Sun Y and Cheng Z H 2008 Chin. Phys. B 17 2717
[4]	Liu W, Liu X H, Cui W B, Gong W J and Zhang Z D 2013 Chin. Phys. B 22 027104
[5]	Lu J D, Hou Y L, Xiong Z Z, Hou T P and Wei R 2008 Microelectronics Journal 39 1576
[6]	Luo Z C, Zhang X Z, Xiong C Y and Chen J J 2015 Adv. Funct. Mater. 25 158
[7]	Joo S, Kim T, Shin S H, Lim J Y, Hong J, Song J D, Chang J, Lee H W, Rhie K, Han S H, Shin K H and Johnson M 2013 Nature 494 72
[8]	Appelbaum I, Huang B Q and Monsma D J 2007 Nature 447 295
[9]	van't Erve O M J, Hanbicki A T, Holub M, Li C H, Affouda C and Thompson P E 2007 Appl. Phys. Lett. 91 212109
[10]	Michael P Delmo, Shinpei Yamamoto, Shinpei Kasai, Teruo Ono and Kensuke Kobayashi 2009 Nature 457 1112
[11]	Schoonus J J H M, Haazen P P J, Swagten H J M and Koopmans B 2009 J. Phys. D: Appl. Phys. 42 185011
[12]	Schoonus J J H M, Bloom F L, Wagemans W and Swagten H J M and Koopmans B 2008 Phys. Rev. Lett. 100 127202
[13]	Wan C H, Zhang X Z, Gao X L, Wang J M and Tan X Y 2011 Nature 477 304
[14]	Shockley W 1949 Bell Syst. Tech. J. 28 435
[15]	Andor L, Henry P B, Nathan A and Schmidt-Weinmar H G 1985 IEEE Trans. Electron Dev. ED-32 1224
[16]	Walter Allegretto, Arokia Nathan and Henry Baltes 1991 IEEE Trans. Comput.-aided Design 10 501
[17]	Claudio Lombardi, Stefano Manzini, Antonio Saporito and Massimo Vanzi 1988 IEEE Trans. Comput.-aided Design 7 1164
[18]	Shockley W and W T 1952 Read Phys. Rev. 87 835
[19]	Hall R N 1952 Phys. Rev. 87 387
[20]	Grove A S 1967 Physics and Technology of Semiconductor Devices (New York: Wiley)
[21]	Kramer K M and Hitchon W N 1997 Semiconductor Devices: a Simulation Approach (Prentice Hall PTR, 1997)

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Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

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