Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

doi:10.1088/1674-1056/23/11/117702

Abstract A theoretical model of flatband voltage (V_FB) of metal/high-k/SiO₂/Si stack is proposed based on band alignment of entire gate stack, i.e., the V_FB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO₂ and SiO₂/Si interfaces, and their interactions. Then the V_FB of TiN/HfO₂/SiO₂/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive V_FB shift of TiN/HfO₂/SiO₂/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO₂ and HfO₂/SiO₂ interfaces.

Keywords: metal gate high-k dielectric band alignment V_fb shift

Received: 03 April 2014
Revised: 28 May 2014
Accepted manuscript online:

PACS:	77.55.D-
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.20.At	(Surface states, band structure, electron density of states)

Fund: Project supported by the National Natural Science of China (Grant Nos. 61176091 and 50932001).

Corresponding Authors: Han Kai
E-mail: hankai@wfu.edu.cn

Cite this article:

Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Xu Yong-Gui (徐永贵), Yang Hong (杨红), Wang Wen-Wu (王文武) Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack 2014 Chin. Phys. B 23 117702

[1]	Hou Y T, Yen F Y, Hsu P F, Chang V S, Lim P S, Hung C L, Yao L G, Jiang J C, Lin H J, Jin Y, Jang S M, Tao H J, Chen S C and Liang M S 2005 IEDM Technical Digest. IEEE International, December 5-7, 2005 Washington, USA, p. 31
[2]	Jha R, Gurganos J, Kim Y H, Choi R, Lee J and Misra V 2004 IEEE Electron Dev. Lett. 25 420
[3]	Wang X L, Han K, Wang W W, Ma X L, Chen D P, Zhang J, Du J, Xiong Y H and Huang A P 2010 Appl. Phys. Lett. 97 062901
[4]	Choi K, Wen H C, G Bersuker, Harris R and Lee B H 2008 Appl. Phys. Lett. 93 133506
[5]	Sze S M and Ng K K 2006 Physics of Semiconductor Devices (3rd edn.) (New York: John Wiley & Sons Ltd.)
[6]	Kita K and Toriumi A 2009 Appl. Phys. Lett. 94 132902
[7]	Shiraishi K, Akasaka Y, Nakamura G, Kadoshima M and Ohta A 2007 Electrochem. Soc. Trans. 11 125
[8]	Iwamoto K, Kamimuta Y, Ogawa A, Watanabe Y, Migita S, Mizubayashi W, Morita Y, Takahashi M, Ota H, Nabatame T and Toriumi A 2008 Appl. Phys. Lett. 92 132907
[9]	Kamimuta Y, Iwamoto K, Nunoshige Y, Hirano A, Mizubayashi W, Watanabe Y, Migita S, Ogawa A, Ota H, Nabatame T and Toriumi A 2007 Electron Devices Meeting, IEDM IEEE International, December 10-12, 2007 Washington USA, p. 341
[10]	Kirsch P D, Sivasubramani P, Huang J, et al. 2008 Appl. Phys. Lett. 92 092901
[11]	Wen H C, Alshareef H N, Luan H, Choi K, Lysaght P, Harris H R, Huffman C, Brown G A, Bersuker G, Zeitzoff P, Huff H, Majhi P and Lee H B 2005 Symposium on VLSI Technology, Digest of Technical Papers, June 14-16, 2005 Kyoto, Japan, p. 46
[12]	Sivasubramani P, Böscke T S, Huang J, et al. 2007 IEEE Symposium on VLSI Technology, June 12-16, 2007 Kyoto, Japan, p. 68
[13]	Wang X L, Han K, Wang W W, Chen S J, Ma X L, Chen D P, Zhang J, Du J, Xiong Y H and Huang A P 2010 Appl. Phys. Lett. 96 152907
[14]	Wang X L, Wang W W, Han K, Yang H, Zhang J, Ma X L, Xiang J J, Zhao C, Chen D P and Ye T C 2012 12th International Workshop on Junction Technology (IWJT), May 14-15, 2012 Shanghai, China, p. 176
[15]	Heine V 1965 Phys. Rev. 138 A1689
[16]	Louie S G, Chelikowsky J R and Cohen M L 1977 Phys. Rev. B 15 2154
[17]	Tejedor C, Flores F and Louis E 1977 J. Phys. C 10 2163
[18]	Tersoff J 1984 Phys. Rev. B 30 4874
[19]	Robertson J and Chen C W 1999 Appl. Phys. Lett. 74 1168
[20]	Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
[21]	Hobbs C, Fonseca L, Dhandapani V, Samavedam S, Taylor B, Grant J, Dip L, Triyoso D, Hegde R, Gilmer D, Garcia R, Roan D, Lovejoy L, Rai R, Hebert L,Tseng H, White B and Tobin P 2003 Symposium on VLSI Technology, Digest of Technical Papers, June 12-14, 2003 Kyoto, Japan, p. 9

[1]	Determination of band alignment between GaO_x and boron doped diamond for a selective-area-doped termination structure Qi-Liang Wang(王启亮), Shi-Yang Fu(付诗洋), Si-Han He(何思翰), Hai-Bo Zhang(张海波),Shao-Heng Cheng(成绍恒), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Chin. Phys. B, 2022, 31(8): 088104.
[2]	Tunable electronic properties of GaS-SnS₂ heterostructure by strain and electric field Da-Hua Ren(任达华), Qiang Li(李强), Kai Qian(钱楷), and Xing-Yi Tan(谭兴毅). Chin. Phys. B, 2022, 31(4): 047102.
[3]	Strain drived band aligment transition of the ferromagnetic VS₂/C₃N van der Waals heterostructure Jimin Shang(商继敏), Shuai Qiao(乔帅), Jingzhi Fang(房景治), Hongyu Wen(文宏玉), and Zhongming Wei(魏钟鸣). Chin. Phys. B, 2021, 30(9): 097507.
[4]	High-performance self-powered photodetector based on organic/inorganic hybrid van der Waals heterojunction of rubrene/silicon Yancai Xu(徐彦彩), Rong Zhou(周荣), Qin Yin(尹钦), Jiao Li(李娇), Guoxiang Si(佀国翔), and Hongbin Zhang(张洪宾). Chin. Phys. B, 2021, 30(7): 077304.
[5]	Band alignment between NiO_x and nonpolar/semipolar GaN planes for selective-area-doped termination structure Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平). Chin. Phys. B, 2021, 30(6): 067701.
[6]	Band offsets and electronic properties of the Ga₂O₃/FTO heterojunction via transfer of free-standing Ga₂O₃ onto FTO/glass Xia Wang(王霞), Wei-Fang Gu(古卫芳), Yong-Feng Qiao(乔永凤), Zhi-Yong Feng(冯志永), Yue-Hua An(安跃华), Shao-Hui Zhang(张少辉), and Zeng Liu(刘增). Chin. Phys. B, 2021, 30(11): 114211.
[7]	Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots Guangze Lu(陆光泽), Zunren Lv(吕尊仁), Zhongkai Zhang(张中恺), Xiaoguang Yang(杨晓光), and Tao Yang(杨涛). Chin. Phys. B, 2021, 30(1): 017802.
[8]	Band alignment of p-type oxide/ε-Ga₂O₃ heterojunctions investigated by x-ray photoelectron spectroscopy Chang Rao(饶畅), Zeyuan Fei(费泽元), Weiqu Chen(陈伟驱), Zimin Chen(陈梓敏), Xing Lu(卢星), Gang Wang(王钢), Xinzhong Wang(王新中), Jun Liang(梁军), Yanli Pei(裴艳丽). Chin. Phys. B, 2020, 29(9): 097303.
[9]	Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars Jia-Fei Yao(姚佳飞), Yu-Feng Guo(郭宇锋), Zhen-Yu Zhang(张振宇), Ke-Meng Yang(杨可萌), Mao-Lin Zhang(张茂林), Tian Xia(夏天). Chin. Phys. B, 2020, 29(3): 038503.
[10]	Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation Zhen-Wu Jiang(姜振武), Shou-Shuai Gao(高守帅), Si-Yu Wang(王思宇), Dong-Xiao Wang(王东潇), Peng Gao(高鹏), Qiang Sun(孙强), Zhi-Qiang Zhou(周志强), Wei Liu(刘玮), Yun Sun(孙云), Yi Zhang(张毅). Chin. Phys. B, 2019, 28(4): 048801.
[11]	Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平). Chin. Phys. B, 2019, 28(12): 128101.
[12]	Key technologies for dual high-k and dual metal gate integration Yong-Liang Li(李永亮), Qiu-Xia Xu(徐秋霞), Wen-Wu Wang(王文武). Chin. Phys. B, 2018, 27(9): 097306.
[13]	Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春). Chin. Phys. B, 2017, 26(8): 087304.
[14]	Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜). Chin. Phys. B, 2017, 26(2): 027101.
[15]	Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春). Chin. Phys. B, 2016, 25(8): 087305.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

Cite this article:

Online attention

Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack