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Two crucial factors influencing quality of GaAs on Ge substrate |
Deng Chuang (邓闯)a b, Men Chuan-Ling (门传玲)a, Chen Da (陈达)b |
a School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; b State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China |
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Abstract High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a (100) 6° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.
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Received: 07 August 2013
Revised: 04 October 2013
Accepted manuscript online:
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PACS:
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68.35.Fx
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(Diffusion; interface formation)
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68.35.Ja
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(Surface and interface dynamics and vibrations)
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68.35.Md
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(Surface thermodynamics, surface energies)
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Fund: Project supported by the Shanghai Municipal Natural Science Foundation, China (Grant No. 13ZR1428200). |
Corresponding Authors:
Men Chuan-Ling
E-mail: anziloveling@126.com
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About author: 68.35.Fx; 68.35.Ja; 68.35.Md |
Cite this article:
Deng Chuang (邓闯), Men Chuan-Ling (门传玲), Chen Da (陈达) Two crucial factors influencing quality of GaAs on Ge substrate 2014 Chin. Phys. B 23 046805
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