The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

doi:10.1088/1674-1056/22/10/107104

Abstract The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor (pFET) are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO₂ due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO₂ increases both the hole mobility and ON-current (I_ON), but has little effect on the hole mobility. The I_ON is degraded by the surface roughness scattering in both strained and unstrained devices.

Keywords: nanowire strain surface roughness scattering quasi-ballistic

Received: 04 March 2013
Revised: 11 April 2013
Accepted manuscript online:

PACS:	71.20.-b	(Electron density of states and band structure of crystalline solids)
	81.40.Jj	(Elasticity and anelasticity, stress-strain relations)
	03.65.Nk	(Scattering theory)
	73.23.Ad	(Ballistic transport)

Fund: Project supported by the National Key Basic Research Program, China (Grant Nos. 2011CBA00604 and 2009ZX02305-003).

Corresponding Authors: Liu Xiao-Yan
E-mail: xyliu@ime.pku.edu.cn

Cite this article:

Qin Jie-Yu (秦洁宇), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦) The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor 2013 Chin. Phys. B 22 107104

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The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

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