InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

doi:10.1088/1674-1056/22/4/048102

Abstract With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970 nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800 mA, an output power of 18.5 mW, and the single Gaussian-like emission spectrum centred at 972 nm with a full width at half maximum of 18 nm are obtained.

Keywords: quantum dot submonolayer self-assembled superluminescent diode

Received: 07 June 2012
Revised: 18 October 2012
Accepted manuscript online:

PACS:	81.07.Ta	(Quantum dots)
	81.16.Dn	(Self-assembly)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	85.60.Jb	(Light-emitting devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086).

Corresponding Authors: Jin Peng
E-mail: pengjin@semi.ac.cn

Cite this article:

Li Xin-Kun (李新坤), Jin Peng (金鹏), Liang De-Chun (梁德春), Wu Ju (吴巨), Wang Zhan-Guo (王占国) InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration 2013 Chin. Phys. B 22 048102

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InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

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