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Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition |
Wang Dang-Chao(王党朝)a)b)†, Zhang Yu-Ming(张玉明) a), Zhang Yi-Men(张义门)a), Lei Tian-Min(雷天民)a), Guo Hui(郭辉)a), Wang Yue-Hu(王悦湖)a), Tang Xiao-Yan(汤晓燕)a), and Wang Hang(王航) a) |
a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; b School of Physics and Electronic Engineering, Xianyang Normal College, Xianyang 712000, China |
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Abstract In this paper, we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar=105 Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 ℃ in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ℃ with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ℃ is four-layer graphene.
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Received: 08 May 2011
Revised: 19 July 2011
Accepted manuscript online:
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PACS:
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81.05.ue
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(Graphene)
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78.30.-j
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(Infrared and Raman spectra)
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61.48.Gh
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(Structure of graphene)
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Fund: Project supported by the Key Research Foundation of the Ministry of Education of China (Grant No. JY10000925016). |
Cite this article:
Wang Dang-Chao(王党朝), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Lei Tian-Min(雷天民), Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Tang Xiao-Yan(汤晓燕), and Wang Hang(王航) Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition 2011 Chin. Phys. B 20 128101
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