Abstract MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of MgxZn1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400--760 nm at the incident angle of 70°. Both absorption coefficients and optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24.eV at x=0 to 3.90 eV at x=0.30. These results provide important information for the design and modelling of ZnO/ MgxZn1-xO heterostructure optoelectronic devices.
Received: 18 January 2006
Revised: 23 March 2006
Accepted manuscript online:
Fund: Project supported by the Doctoral Program Foundation of State
Education Department (Grant No
20020422056).
Cite this article:
Zhang Xi-Jian(张锡健), Ma Hong-Lei(马洪磊), Li Yu-Xiang(李玉香), Wang Qing-Pu(王卿璞), Ma Jin(马瑾), Zong Fu-Jian(宗福建), and Xiao Hong-Di(肖洪地) The optical properties of MgxZn1-xO thin films 2006 Chinese Physics 15 2385
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