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Magnetic anisotropy in MnGe thin films and its evolution under external magnetic fields |
| Zhaohang Li(李朝航)1,†, Fanbao Meng(孟凡保)1,†, Kesen Zhao(赵科森)1,2, Tao Qi(齐涛)1, Shihao Liu(刘仕豪)1, Zongyao Huang(黄宗耀)1, Feixiong Quan(全飞熊)1, Zhiwei Wang(王智炜)1, Zhengjie Wang(王郑杰)1, Xigang Luo(罗习刚)1, Jianjun Ying(应剑俊)1, Yubin Hou(侯玉斌)2, Wenjie Meng(孟文杰)2, Qingyou Lu(陆轻铀)1,2, and Xianhui Chen(陈仙辉)1,3,4,‡ |
1 Department of Physics, University of Science and Technology of China, Hefei 230026, China;
2 Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230026, China;
3 CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China;
4 CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei 230026, China |
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Abstract Chiral magnets have attracted considerable attention due to their intricate magnetic properties, among which B20 compounds constitute a quintessential class that has gained significant focus, particularly in the study of skyrmions. MnGe, as a member of the B20 family, exhibits a more complex magnetic structure compared with other materials with similar crystal structures. In this work, we successfully synthesized high-quality MnGe thin films and characterized their magnetoresistance, $M$—$H$ curves, magneto-Seebeck effect, and magnetic force microscopy (MFM) images, all of which demonstrate pronounced magnetic anisotropy. Notably, the Seebeck coefficient exhibits a plateau at low magnetic fields when the magnetic field is applied in the film plane, indicating a field region in which the magnetic structure remains stable. MFM imaging further reveals magnetic transitions within the MnGe films when the magnetic field is oriented along the film plane. These findings are crucial for advancing our understanding of the magnetic ground state of MnGe and the evolution of its magnetic structure under an applied external magnetic field.
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Received: 01 September 2025
Revised: 09 October 2025
Accepted manuscript online: 10 October 2025
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PACS:
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68.37.Rt
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(Magnetic force microscopy (MFM))
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68.55.-a
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(Thin film structure and morphology)
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73.61.-r
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(Electrical properties of specific thin films)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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| Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 12488201, 12274390, 12304035, and 51627901), the Anhui Initiative in Quantum Information Technologies (Grant No. AHY160000), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302802), the National Key R&D Program of the MOST of China (Grant No. 2022YFA1602600), the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures (Grant No. JZHKYPT-2021- 08), and the National Key R&D Program of China (Grant No. 2023YFA1607701). We thank the staff members of the SMA System (https://cstr.cn/31125.02.SHMFF.SM2.SMA) at the Steady High Magnetic Field Facility, CAS (https://cstr.cn/31125.02.SHMFF), for providing technical support and assistance in data collection and analysis. |
Corresponding Authors:
Xianhui Chen
E-mail: chenxh@ustc.edu.cn
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Cite this article:
Zhaohang Li(李朝航), Fanbao Meng(孟凡保), Kesen Zhao(赵科森), Tao Qi(齐涛), Shihao Liu(刘仕豪), Zongyao Huang(黄宗耀), Feixiong Quan(全飞熊), Zhiwei Wang(王智炜), Zhengjie Wang(王郑杰), Xigang Luo(罗习刚), Jianjun Ying(应剑俊), Yubin Hou(侯玉斌), Wenjie Meng(孟文杰), Qingyou Lu(陆轻铀), and Xianhui Chen(陈仙辉) Magnetic anisotropy in MnGe thin films and its evolution under external magnetic fields 2026 Chin. Phys. B 35 016802
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