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Magnetic domain structures in ultrathin Bi2Te3/CrTe2 heterostructures |
| Tirui Xia(夏体瑞)1, Xiaotian Yang(杨笑天)1, Yifan Zhang(张逸凡)2,3, Xinqi Liu(刘馨琪)1,3, Xinyu Cai(蔡新雨)1, Chang Liu(刘畅)4, Qi Yao(姚岐)1,3,†, Xufeng Kou(寇煦丰)2,3,‡, and Wenbo Wang(王文波)1,3,§ |
1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
2 School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China;
3 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China;
4 Department of Materials Science, Fudan University, Shanghai 200438, China |
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Abstract Chromium tellurium compounds are important two-dimensional van der Waals ferromagnetic materials with high Curie temperature and chemical stability in air, which is promising for applications in spintronic devices. Here, high-quality spin-orbital-torque (SOT) device, Bi$_{2}$Te$_{3}$/CrTe$_{2}$ heterostructure was epitaxially grown on Al$_{2}$O$_{3 }$ (0001) substrates. Anomalous Hall measurements indicate the existence of strong ferromagnetism in this device with the CrTe$_{2}$ thickness down to 10 nm. In order to investigate its micromagnetic structure, cryogenic magnetic force microscope (MFM) was utilized to measure the magnetic domain evolutions at various temperatures and magnetic fields. The virgin domain state of the device shows a worm-like magnetic domain structure with the size around 0.6 μm-0.8 μm. Larger irregular-shape magnetic domains (>1 μm) can be induced and pinned, after the field is increased to coercive field and ramped back to low fields. The temperature-dependent MFM signals exhibit a nice mean-field-like ferromagnetic transition with Curie temperature around 201.5 K, indicating a robust ferromagnetic ordering. Such a device can be potentially implemented in future magnetic memory technology.
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Received: 27 February 2024
Revised: 09 May 2024
Accepted manuscript online:
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PACS:
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75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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75.60.-d
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(Domain effects, magnetization curves, and hysteresis)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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85.70.-w
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(Magnetic devices)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403000), the National Natural Science Foundation of China (Grant No. 12374161), and the Fund from the Science and Technology Commission of Shanghai Municipality (Grant No. 21PJ410800). X. F. Kou acknowledges the support from the National Natural Science Foundation of China (Grant No. 92164104), the RisingStar Program of Shanghai (Grant No. 21QA1406000), and the Open Fund of State Key Laboratory of Infrared Physics. |
Corresponding Authors:
Qi Yao, Xufeng Kou, Wenbo Wang
E-mail: yaoqi@shanghaitech.edu.cn;kouxf@shanghaitech.edu.cn;wangwb1@shanghaitech.edu.cn
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Cite this article:
Tirui Xia(夏体瑞), Xiaotian Yang(杨笑天), Yifan Zhang(张逸凡), Xinqi Liu(刘馨琪), Xinyu Cai(蔡新雨), Chang Liu(刘畅), Qi Yao(姚岐), Xufeng Kou(寇煦丰), and Wenbo Wang(王文波) Magnetic domain structures in ultrathin Bi2Te3/CrTe2 heterostructures 2024 Chin. Phys. B 33 087504
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