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Uniform wafer-scale MOCVD homoepitaxy of β-Ga2O3 on 2-inch (010) substrates |
| Xuanze Zhou(周选择)1, Haozhong Wu(吴昊中)1, Yuanjie Ding(丁元杰)1, Ziyuan Wang(王子原)1, Zhiyu Zhou(周智宇)1, Ning Xia(夏宁)2, Song Zhang(张嵩)3,4,†, Guangwei Xu(徐光伟)1,‡, Hui Zhang(张辉)2, and Shibing Long(龙世兵)1 |
1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
2 Hangzhou Garen Semiconductor Company Limited, Hangzhou 311200, China;
3 The 46th Research Institute, China Electronics Technology Group Corporation, Tianjin 300220, China;
4 CETC Key Laboratory of Advanced Semiconductor Crystal Materials and Technologies, Tianjin 300220, China |
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Abstract The (010) orientation of $\beta $-Ga$_2$O$_3$ is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties. However, progress has been impeded by the unavailability of large-area substrates, limiting studies to small-scale samples. Leveraging the recent emergence of 2-inch wafers, we report the first demonstration of homoepitaxial growth on a 2-inch, Fe-doped semi-insulating (010) $\beta $-Ga$_2$O$_3$ substrate by metal-organic chemical vapor deposition (MOCVD). A systematic, wafer-scale characterization reveals the successful growth of a high-quality epitaxial film. High-resolution x-ray diffraction shows an excellent crystalline structure, with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec. Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm, displaying a distinct step-flow growth mode across the wafer. Furthermore, mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of $\sim 2\times 10^{18}$ cm$^{-3}$ with a RSD of 5.12%. This work provides the first comprehensive assessment of 2-inch (010) Ga$_2$O$_3$ epitaxial wafers, validating a critical material platform for the development and future manufacturing of high-performance power devices.
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Received: 19 September 2025
Revised: 13 October 2025
Accepted manuscript online: 14 October 2025
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PACS:
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68.35.bg
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(Semiconductors)
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84.30.Jc
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(Power electronics; power supply circuits)
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81.10.Bk
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(Growth from vapor)
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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| Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. U23A20358, 62474170, 61925110, 62404214, and 62234007), the University of Science and Technology of China (USTC) Research Funds of the Double First-Class Initiative (Grant No. WK2100000055), the Project of the 46th Research Institute of CETC (Grant No. WDZC202446007), the JieBang Headed Project of Changsha City Hunan Province (Grant No. kq2301006), and the Opening Project and the Key Laboratory of Nano devices and Applications in Suzhou Institute of Nano-Tech and NanoBionics of CAS. |
Corresponding Authors:
Song Zhang, Guangwei Xu
E-mail: zhangsong02@163.com;xugw@ustc.edu.cn
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Cite this article:
Xuanze Zhou(周选择), Haozhong Wu(吴昊中), Yuanjie Ding(丁元杰), Ziyuan Wang(王子原), Zhiyu Zhou(周智宇), Ning Xia(夏宁), Song Zhang(张嵩), Guangwei Xu(徐光伟), Hui Zhang(张辉), and Shibing Long(龙世兵) Uniform wafer-scale MOCVD homoepitaxy of β-Ga2O3 on 2-inch (010) substrates 2026 Chin. Phys. B 35 016801
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