Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures

doi:10.1088/1674-1056/adee8a

Abstract This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well (TODP-MOSFET) to enhance the single-event radiation tolerance of the gate oxide. Simulation results suggest that the proposed TODP structure reduces the peak electric field within the oxide and minimizes the sensitive region by more than 70% compared to C-MOSFETs. Experimental results show that the gate degradation voltage of the TODP-MOSFET is higher than that of the C-MOSFET, and the gate leakage current is reduced by 95% compared to the C-MOSFET under heavy-ion irradiation with a linear energy transfer (LET) value exceeding 75 MeV$\cdot $cm$^{2}$/mg.

Keywords: silicon carbide single-event leakage current (SELC) gate oxide electric field gate leakage current velocity

Received: 30 April 2025
Revised: 03 July 2025
Accepted manuscript online: 11 July 2025

PACS:	77.55.dj	(For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))
	43.72.+q	(Speech processing and communication systems)
	43.38.Hz	(Transducer arrays, acoustic interaction effects in arrays)

Fund: This work was supported by the Joint Funds of the National Natural Science Foundation of China (Grant No. U2341220) and the Hefei Comprehensive National Science Center.

Corresponding Authors: Chao Han
E-mail: chaohan@xidian.edu.cn

Cite this article:

Yin Luo(罗寅), Keyu Liu(刘科宇), Hao Yuan(袁昊), Zhiwen Zhang(张质文), Chao Han(韩超), Xiaoyan Tang(汤晓燕), Qingwen Song(宋庆文), and Yuming Zhang(张玉明) Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures 2025 Chin. Phys. B 34 097701

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Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures

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