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Chin. Phys. B, 2023, Vol. 32(9): 098505    DOI: 10.1088/1674-1056/acad6b
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

Jia-Hao Chen(陈嘉豪)1, Ying Wang(王颖)1,†, Xin-Xing Fei(费新星)2, Meng-Tian Bao(包梦恬)1, and Fei Cao(曹菲)1
1 College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;
2 The Yangzhou Marine Electronic Instrument Institute, Yangzhou 225001, China
Abstract  A method to improve the surge current capability of silicon carbide (SiC) merged PiN Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal simulations. When compared with a conventional MPS diode, the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+ surface, which can avoid the formation of local hotspots during the surge process. The Silvaco simulation results show that the proposed structure has a 20.29% higher surge capability and a 15.06% higher surge energy compared with a conventional MPS diode. The bipolar on-state voltage of the proposed structure is 4.69 V, which is 56.29% lower than that of a conventional MPS diode, enabling the device to enter the bipolar mode earlier during the surge process. Furthermore, the proposed structure can suppress the occurrence of 'snapback' phenomena when switching from the unipolar to the bipolar operation mode. In addition, an analysis of the surge process of MPS diodes is carried out in detail.
Keywords:  merged PiN Schottky (MPS) diode      silicon carbide (SiC)      surge capability      surge energy      reliability  
Received:  15 August 2022      Revised:  11 December 2022      Accepted manuscript online:  21 December 2022
PACS:  85.30.-z (Semiconductor devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814), the National Natural Science Foundation of China (Grant No. 61904045), and Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ20F040004).
Corresponding Authors:  Ying Wang     E-mail:  wangying7711@yahoo.com

Cite this article: 

Jia-Hao Chen(陈嘉豪), Ying Wang(王颖), Xin-Xing Fei(费新星), Meng-Tian Bao(包梦恬), and Fei Cao(曹菲) Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness 2023 Chin. Phys. B 32 098505

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