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Unraveling the role of dangling bonds passivation in amorphous Ga2O3 for high-performance solar-blind UV detection |
| Zhengru Li(李正濡)1,2, Rui Zhu(朱锐)2,†, Huili Liang(梁会力)2,3, Shichen Su(宿世臣)1,‡, and Zengxia Mei(梅增霞)2,3,§ |
1 School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China;
2 Songshan Lake Materials Laboratory, Dongguan 523808, China;
3 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Low-cost and large-area uniform amorphous Ga$_{2}$O$_{3}$ (a-Ga$_{2}$O$_{3}$) solar-blind ultraviolet (UV) detectors have garnered significant attention in recent years. Oxygen vacancy (V$_{\rm O}$) defects are generally considered as the predominant defects affecting the detector performance. Reducing V$_{\rm O}$ concentration generally results in both low dark current and low photo current, significantly limiting further improvement of the photo-to-dark current ratio (PDCR) parameter. Herein, a delicately optimized atomic layer deposition (ALD) method is revealed having the capability to break through the trade-off in a-Ga$_{2}$O$_{3}$, achieving both low dark current and high photocurrent simultaneously. For a clear demonstration, a-Ga$_{2}$O$_{3 }$ contrast sample is prepared by magnetron sputtering and compared as well. Combined tests are performed including x-ray photoelectron spectroscopy, photoluminescence, electron paramagnetic resonance and Fourier-transform infrared spectroscopy. It is found that ALD a-Ga$_{2}$O$_{3}$ has a lower V$_{\rm O}$ concentration, but also a lower dangling bonds concentration which are strong non-irradiation recombination centers. Therefore, decrease of dangling bonds is suggested to compensate for the low optical gain induced by low V$_{\rm O}$ concentration and promote the PDCR to $ \sim 2.06 \times 10^{6}$. Our findings firstly prove that the dangling bonds also play an important role in determining the a-Ga$_{2}$O$_{3}$ detection performance, offering new insights for further promotion of a-Ga$_{2}$O$_{3 }$ UV detector performance via dual optimization of dangling bonds and V$_{\rm O}$.
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Received: 08 March 2025
Revised: 31 March 2025
Accepted manuscript online: 10 April 2025
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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73.61.Jc
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(Amorphous semiconductors; glasses)
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61.72.jd
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(Vacancies)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62404146, 12174275, and 62174113), the Basic and Applied Basic Research Foundation of Guangdong Province, China (Grant Nos. 2023A1515110730 and 2023A1515140094), and the INTPART Program at the Research Council of Norway (Project number 322382). |
Corresponding Authors:
Rui Zhu, Shichen Su, Zengxia Mei
E-mail: zhurui@sslab.org.cn;shichensu@126.com;zxmei@iphy.ac.cn
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Cite this article:
Zhengru Li(李正濡), Rui Zhu(朱锐), Huili Liang(梁会力), Shichen Su(宿世臣), and Zengxia Mei(梅增霞) Unraveling the role of dangling bonds passivation in amorphous Ga2O3 for high-performance solar-blind UV detection 2025 Chin. Phys. B 34 078502
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