Amorphous IGMO/IGZO heterojunction thin-film transistors with enhanced ultraviolet detection performance
Jichun Yao(姚继春), Yiyu Zhang(张怡宇), and Xingzhao Liu(刘兴钊)†
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Abstract Amorphous InGaZnO (IGZO) is a potential candidate for integrated circuits based on thin-film transistors (TFTs) owing to its low-temperature processability and high mobility. Amorphous InGaMgO/InGaZnO (IGMO/IGZO) heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report. The energy band at the IGMO/IGZO heterojunction was characterized, and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction. Furthermore, the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8 A/W and a large detectivity of 5.2 Jones under 350-nm ultraviolet illumination, which will also benefit for fabrication of monolithic ultraviolet sensing chip.
(Absorption and reflection spectra: visible and ultraviolet)
Fund: Project supported by the Regional Innovation and Development Joint Fund of the National Nature Science Foundation of China (Grant No. U21A2071).
Corresponding Authors:
Xingzhao Liu
E-mail: xzliu@uestc.edu.cn
Cite this article:
Jichun Yao(姚继春), Yiyu Zhang(张怡宇), and Xingzhao Liu(刘兴钊) Amorphous IGMO/IGZO heterojunction thin-film transistors with enhanced ultraviolet detection performance 2025 Chin. Phys. B 34 057104
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