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Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor |
| Wentao Yu(于文韬)1, Long Zhao(赵龙)1, Yanfei Gao(高延飞)1, Shiping Gao(高石平)1, Yuekun Yang(杨悦昆)2, Chen Pan(潘晨)1†, Shi-Jun Liang(梁世军)2‡, and Bin Cheng(程斌)1§ |
1 Institute of Interdisciplinary Physical Sciences, School of Physics, Nanjing University of Science and Technology, Nanjing 210094, China;
2 Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Physical Science Research Center, Nanjing University, Nanjing 210093, China |
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Abstract Electrically tunable homojunctions based on ambipolar two-dimensional materials have attracted widespread attention in the field of intelligent vision. These devices exhibit inherent switchable positive and negative photovoltaic properties that effectively mimic the behavior of human retinal cells. However, the photovoltaic responsivity of most electrically tunable homojunctions remains significantly low due to the weak light absorption, making it challenging to meet the application requirements for high-sensitivity target detection in the field of intelligent vision. Here, we propose a gate-tunable photodiode based on two-dimensional ambipolar WSe$_{2}$ with an asymmetric gate electrode, achieving high photovoltaic responsivity. By adjusting the gate voltage and keeping bias voltage zero, we can dynamically realize reconfigurable n$^-$-p and n$^-$-n homojunction states, as well as gate-tunable photovoltaic response characteristics that range from positive to negative. The maximum photovoltaic responsivity of the electrically tunable WSe$_{2}$ homojunction is approximately 0.4 A/W, which is significantly larger than the previously reported value 0.1 A/W in homojunction devices. In addition, the responsivity can be further enhanced to approximately 1.0 A/W when the n-p photodiode operates in reverse bias mode, enabling high-sensitivity detection of targets. Our work paves the way for developing gate-tunable photodiodes with high photovoltaic responsivity and advancing high-performance intelligent vision technology.
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Received: 12 November 2024
Revised: 04 December 2024
Accepted manuscript online: 10 December 2024
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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Corresponding Authors:
Chen Pan, Shi-Jun Liang, Bin Cheng
E-mail: chenpan@njust.edu.cn;sjliang@nju.edu.cn;bincheng@njust.edu.cn
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| About author: 2025-018502-241635.pdf |
Cite this article:
Wentao Yu(于文韬), Long Zhao(赵龙), Yanfei Gao(高延飞), Shiping Gao(高石平), Yuekun Yang(杨悦昆), Chen Pan(潘晨), Shi-Jun Liang(梁世军), and Bin Cheng(程斌) Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor 2025 Chin. Phys. B 34 018502
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