Valley polarization in transition metal dichalcogenide layered semiconductors: Generation, relaxation, manipulation and transport

doi:10.1088/1674-1056/ace160

Abstract In recent years, valleytronics researches based on 2D semiconducting transition metal dichalcogenides have attracted considerable attention. On the one hand, strong spin-orbit interaction allows the presence of spin-valley coupling in this system, which provides spin addressable valley degrees of freedom for information storage and processing. On the other hand, large exciton binding energy up to hundreds of meV enables excitons to be stable carriers of valley information. Valley polarization, marked by an imbalanced exciton population in two inequivalent valleys (+$K$ and -$K$), is the core of valleytronics as it can be utilized to store binary information. Motivated by the potential applications, we present a thorough overview of the recent advancements in the generation, relaxation, manipulation, and transport of the valley polarization in nonmagnetic transition metal dichalcogenide layered semiconductors. We also discuss the development of valleytronic devices and future challenges in this field.

Keywords: valley polarization nonmagnetic transition metal dichalcogenide layered semiconductors exciton

Received: 25 May 2023
Revised: 11 June 2023
Accepted manuscript online: 25 June 2023

PACS:	68.65.-k	(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
	71.35.-y	(Excitons and related phenomena)
	72.25.Fe	(Optical creation of spin polarized carriers)
	72.25.Dc	(Spin polarized transport in semiconductors)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB2803900), the National Natural Science Foundation of China (Grant Nos. 61704121 and 61974075), Natural Science Foundation of Tianjin City (Grant Nos. 19JCQNJC00700 and 22JCZDJC00460), Tianjin Municipal Education Commission (Grant No. 2019KJ028), and Fundamental Research Funds for the Central Universities (Grant No. 22JCZDJC00460).

Corresponding Authors: Chongyun Jiang
E-mail: jiang.chongyun@nankai.edu.cn

Cite this article:

Hui Ma(马惠), Yaojie Zhu(朱耀杰), Yulun Liu(刘宇伦), Ruixue Bai(白瑞雪), Xilin Zhang(张喜林), Yanbo Ren(任琰博), and Chongyun Jiang(蒋崇云) Valley polarization in transition metal dichalcogenide layered semiconductors: Generation, relaxation, manipulation and transport 2023 Chin. Phys. B 32 107201

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Valley polarization in transition metal dichalcogenide layered semiconductors: Generation, relaxation, manipulation and transport

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