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Low-damage photolithography for magnetically doped (Bi,Sb)2Te3 quantum anomalous Hall thin films |
| Zhiting Gao(高志廷)1,2,†, Minghua Guo(郭明华)1,3,†, Zichen Lian(连梓臣)1,†, Yaoxin Li(李耀鑫)1, Yunhe Bai(白云鹤)1, Xiao Feng(冯硝)1,2,4,5, Ke He(何珂)1,2,4,5, Yayu Wang(王亚愚)1,4,5, Chang Liu(刘畅)6,7,‡, and Jinsong Zhang(张金松)1,4,5,§ |
1 State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
2 Beijing Academy of Quantum Information Sciences, Beijing 100193, China;
3 School of Integrated Circuits, Tsinghua University, Beijing 100084, China;
4 Frontier Science Center for Quantum Information, Beijing 100084, China;
5 Hefei National Laboratory, Hefei 230088, China;
6 Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China;
7 Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education), Renmin University of China, Beijing 100872, China |
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Abstract We have developed a low-damage photolithography method for magnetically doped (Bi,Sb)2Te3 quantum anomalous Hall (QAH) thin films incorporating an additional resist layer of poly(methyl methacrylate) (PMMA). By performing control experiments on the transport properties of five devices at varied gate voltages (Vgs), we revealed that the modified photolithography method enables fabricating QAH devices with the transport and magnetic properties unaffected by fabrication process. Our experiment represents a step towards the production of novel micro-structured electronic devices based on the dissipationless QAH chiral edge states.
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Received: 03 August 2023
Revised: 24 September 2023
Accepted manuscript online: 09 October 2023
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PACS:
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73.20.-r
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(Electron states at surfaces and interfaces)
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73.50.-h
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(Electronic transport phenomena in thin films)
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42.82.Cr
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(Fabrication techniques; lithography, pattern transfer)
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| Fund: This work was supported by the National Key Research and Development Program of China (Grant No. 2018YFA0307100), the Basic Science Center Project of the National Natural Science Foundation of China (Grant No. 52388201), the National Natural Science Foundation of China (Grant Nos. 12274453 and 92065206), and the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302502). Chang Liu was also supported by Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202204). Yayu Wang was also supported by the New Cornerstone Science Foundation through the New Cornerstone Investigator Program and the XPLORER PRIZE. |
Corresponding Authors:
Chang Liu, Jinsong Zhang
E-mail: liuchang_phy@ruc.edu.cn;jinsongzhang@tsinghua.edu.cn
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Cite this article:
Zhiting Gao(高志廷), Minghua Guo(郭明华), Zichen Lian(连梓臣), Yaoxin Li(李耀鑫), Yunhe Bai(白云鹤), Xiao Feng(冯硝), Ke He(何珂), Yayu Wang(王亚愚), Chang Liu(刘畅), and Jinsong Zhang(张金松) Low-damage photolithography for magnetically doped (Bi,Sb)2Te3 quantum anomalous Hall thin films 2023 Chin. Phys. B 32 117303
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