1 Department of Physics, Xinxiang University, Xinxiang 453003, China; 2 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan; 3 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China; 4 State Key Laboratory of Superhard Material, Jilin University, Changchun 130012, China
Abstract Vertical GaN Schottky barrier diodes with TiN anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ cm2, respectively. The current-voltage curves show rectifying characteristics under different temperatures from 25 °C to 200 °C, implying a good thermal stability of TiN/GaN contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at TiN/GaN interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.
Fund: Project supported by the Open Project of State Key Laboratory of Superhard Materials, Jilin University (Grant No. 201906), Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics (Grant No. 202006), and the Science and Technology Program of Ningbo (Grant No. 2019B10129).
Corresponding Authors: †D. Liu and X. Li contributed equally to this work. ‡Corresponding author. E-mail: fbc_ptf@126.com§Corresponding author. E-mail: wangqiliang@jlu.edu.cn
Cite this article:
Da-Ping Liu(刘大平), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Shao-Heng Cheng(成绍恒), and Qi-Liang Wang(王启亮) Vertical GaN Shottky barrier diode with thermally stable TiN anode 2021 Chin. Phys. B 30 038101
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