1 Center for Topological Functional Materials, Henan University, Kaifeng 475004, China; 2 Key Laboratory of Material Physics(Ministry of Education), School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
Abstract We fabricate SrRuO3/PbZr0.52Ti0.48O3 heterostructures each with an in-plane tensile-strained SrRuO3 layer and investigate the effect of an applied electric field on anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed. By applying positive electric field or negative electric field, the intersecting hump-like feature is suppressed or enhanced, respectively. The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field. The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO3. The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO3 heterostructures.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11974099), the Intelligence Introduction Plan of Henan Province, China in 2021 (Grant No. CXJD2021008), the Plan for Leading Talent of Fundamental Research of the Central China in 2020, and the Key Scientific Research Project of Colleges and Universities in Henan Province, China (Grant No. 21A140005).
Zhen-Li Wang(王振礼), Chao-Yang Kang(康朝阳), Cai-Hong Jia(贾彩虹), Hai-Zhong Guo(郭海中), and Wei-Feng Zhang(张伟风) Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO3/PbZr0.52Ti0.48O3 heterostructures 2023 Chin. Phys. B 32 107303
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