| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Optimization of thermoelectric properties in elemental tellurium via high pressure |
| Dongyao Zhao(赵东尧)1,†, Manman Yang(杨曼曼)1,†, Hairui Sun(孙海瑞)1,2,‡, Xin Chen(陈欣)1,2, Yongsheng Zhang(张永胜)1,2, and Xiaobing Liu(刘晓兵)1,2,§ |
1 Laboratory of High-Pressure Physics and Materials Science(HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China;
2 Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu 273165, China |
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Abstract High pressure and high temperature (HPHT) technology, as an extreme physical condition, plays an important role in regulating the properties of materials, having the advantages of enhancing doping efficiency, refining grain size, and manufacturing defects, therefore it is quite necessary to study the effectiveness on tuning thermoelectric properties. Elemental telluride, a potential candidate for thermoelectric materials, has the poor doping efficiency and high resistivity, which become an obstacle for practical applications. Here, we report the realization of a dual optimization of electrical behaviors and thermal conductivity through HPHT method combining with the introduction of black phosphorus. The results show the maximum $zT$ of 0.65 and an average $zT$ of 0.42 (300 K-610 K), which are increased by 55% and 68% in the synthesis pressure regulation system, respectively. This study clarifies that the HPHT method has significant advantages in modulating the thermoelectric parameters, providing a reference for seeking high performance thermoelectric materials.
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Received: 21 April 2023
Revised: 09 June 2023
Accepted manuscript online: 25 June 2023
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PACS:
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73.50.Lw
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(Thermoelectric effects)
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91.60.Gf
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(High-pressure behavior)
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61.82.Fk
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(Semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11804185, 11974208, 52172212, 52102335, and 52002217) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2020YQ05, ZR2019MA054, 2019KJJ020, ZR2021YQ03, and 2022KJA043). |
Corresponding Authors:
Hairui Sun, Xiaobing Liu
E-mail: hairuisun1216@qfnu.edu.cn;xiaobing.phy@qfnu.edu.cn
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Cite this article:
Dongyao Zhao(赵东尧), Manman Yang(杨曼曼), Hairui Sun(孙海瑞), Xin Chen(陈欣), Yongsheng Zhang(张永胜), and Xiaobing Liu(刘晓兵) Optimization of thermoelectric properties in elemental tellurium via high pressure 2023 Chin. Phys. B 32 107305
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