1 School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China; 2 School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China; 3 Innovation Center for Gallium Oxide Semiconductor(IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China; 4 Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Abstract The -GaO thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition (MOCVD) method, and then was used to fabricate a deep-ultraviolet (DUV) photodetector (PD). The -GaO thin film shown good crystal quality and decent surface morphology. Irradiated by a 254-nm DUV light, the photodetector displayed good optoelectronic performance and high wavelength selectivity, such as photoresponsivity () of 175.69 A/W, detectivity () of Jones, external quantum efficiency (EQE) of and good photocurrent-intensity linearity, suggesting decent DUV photosensing performance. At 5 V and under illumination with light intensity of 800 μW/cm, the photocurrent gain is as high as 859 owing to the recycling gain mechanism and delayed carrier recombination; and the photocurrent gain decreases as the incident light intensity increases because of the recombination of photogenerated carriers by the large photon flux.
Yue-Hua An(安跃华), Zhen-Sen Gao(高震森), Yu Guo(郭雨), Shao-Hui Zhang(张少辉), Zeng Liu(刘增), and Wei-Hua Tang(唐为华) One ε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity 2023 Chin. Phys. B 32 058502
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