| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Quantitative measurement of the charge carrier concentration using dielectric force microscopy |
| Junqi Lai(赖君奇)1,2, Bowen Chen(陈博文)1,2, Zhiwei Xing(邢志伟)3, Xuefei Li(李雪飞)3, Shulong Lu(陆书龙)2,3, Qi Chen(陈琪)1,2,†, and Liwei Chen(陈立桅)1,4,‡ |
1 i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
3 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
4 In-situ Center for Physical Sciences, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China |
|
|
|
|
Abstract The charge carrier concentration profile is a critical factor that determines semiconducting material properties and device performance. Dielectric force microscopy (DFM) has been previously developed to map charge carrier concentrations with nanometer-scale spatial resolution. However, it is challenging to quantitatively obtain the charge carrier concentration, since the dielectric force is also affected by the mobility. Here, we quantitative measured the charge carrier concentration at the saturation mobility regime via the rectification effect-dependent gating ratio of DFM. By measuring a series of n-type GaAs and GaN thin films with mobility in the saturation regime, we confirmed the decreased DFM-measured gating ratio with increasing electron concentration. Combined with numerical simulation to calibrate the tip-sample geometry-induced systematic error, the quantitative correlation between the DFM-measured gating ratio and the electron concentration has been established, where the extracted electron concentration presents high accuracy in the range of 4×1016 - 1×1018 cm-3. We expect the quantitative DFM to find broad applications in characterizing the charge carrier transport properties of various semiconducting materials and devices.
|
Received: 25 July 2022
Revised: 27 November 2022
Accepted manuscript online: 02 December 2022
|
|
PACS:
|
72.20.-i
|
(Conductivity phenomena in semiconductors and insulators)
|
| |
72.80.Ey
|
(III-V and II-VI semiconductors)
|
| |
68.37.Ps
|
(Atomic force microscopy (AFM))
|
| |
02.60.-x
|
(Numerical approximation and analysis)
|
|
| Fund: Project supported by the National Key R&D Program of China (Grant No. 2021YFA1202802), the National Natural Science Foundation of China (Grant Nos. 21875280, 21991150, 21991153, and 22022205), the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-054), and the Special Foundation for Carbon Peak Neutralization Technology Innovation Program of Jiangsu Province, China (Grant No. BE2022026). |
Corresponding Authors:
Qi Chen, Liwei Chen
E-mail: qchen2011@sinano.ac.cn;lwchen2018@sjtu.edu.cn
|
Cite this article:
Junqi Lai(赖君奇), Bowen Chen(陈博文), Zhiwei Xing(邢志伟), Xuefei Li(李雪飞), Shulong Lu(陆书龙), Qi Chen(陈琪), and Liwei Chen(陈立桅) Quantitative measurement of the charge carrier concentration using dielectric force microscopy 2023 Chin. Phys. B 32 037202
|
[1] Koster L J A, Smits E C P, Mihailetchi V D and Blom P W M 2005 Phys. Rev. B 72 085205
[2] Sze S M and Ng K K 2006 Physics of semiconductor devices (New Jersey: John wiley & sons) pp. 16-75
[3] Li P, Ai X, Zhang Q H, Gu S J, Wang L J and Jiang W 2021 Chin. Chem. Lett. 32 811
[4] Pingree L S C, Reid O G and Ginger D S 2009 Adv. Mater. 21 19
[5] Chen X, Lai J Q, Shen Y B, Chen Q and Chen L W 2018 Adv. Mater. 30 1802490
[6] Lai K, Kundhikanjana W, Kelly M and Shen Z X 2008 Rev. Sci. Instrum. 79 063703
[7] Hussain S, Xu K Q, Ye S L, Lei L, Liu X M, Xu R, Xie L M and Cheng Z H 2019 Front. Phys. 14 33401
[8] Barrett R C and Quate C F 1991 J. Appl. Phys. 70 2725
[9] Linde F, Yadavalli N S and Santer S 2013 Appl. Phys. Lett. 103 253101
[10] Cherniavskaya O, Chen L W, Weng V, Yuditsky L and Brus L E 2003 J. Phys. Chem. B 107 1525
[11] Zhang J, Ye F Y, Chen Q, Lu W, Cai J H and Chen L W 2013 Sci. Sin.: Chim. 43 1806
[12] Zhang J, Lu W, Li Y S, Cai J H and Chen L W 2015 Acc. Chem. Res. 48 1788
[13] Jiang Y P, Qi Q, Wang R, Zhang J, Xue Q K, Wang C, Jiang C and Qiu X H 2011 ACS Nano 5 6195
[14] Chen Q, Chen L, Ye F Y, Zhao T, Tang F, Rajagopal A, Jiang Z, Jiang S, Jen A K Y, Y. X, Cai J H and Chen L W 2017 Nano Lett. 17 3231
[15] Li Z J, Wu J J, Hu Z P, Lin Y, Chen Q, Guo Y Q, Liu Y H, Zhao Y C, Peng J, Chu W S, Wu C Z and Xie Y 2017 Nat. Commun. 8 15561
[16] Xu R, Ye S L, Xu K Q, Lei L, Hussain S, Zheng Z Y, Pang F, Xing S Y, Liu X M, Ji W and Cheng Z H 2018 Nanotechnology 29 355701
[17] Lu W, Xiong Y, Hassanien A, Zhao W, Zheng M and Chen L W 2009 Nano Lett. 9 1668
[18] Lu W, Xiong Y and Chen L W 2009 J. Phys. Chem. C 113 10337
[19] Lu W, Zhang J, Li Y S, Chen Q, Wang X P, Hassanien A and Chen L W 2012 J. Phys. Chem. C 116 7158
[20] Zhang K, Marzari N and Zhang Q 2013 J. Phys. Chem. C 117 24570
[21] Zhang K, Wang X, Sun L, Zou J, Wang J, Liu Z, Chen T, Tay B K and Zhang Q 2017 Appl. Phys. Lett. 111 043106
[22] Lei L, Xu R, Ye S L, Wang X S, Xu K Q, Hussain S, Li Y J, Sugawara Y, Xie L M, Ji W and Cheng Z H 2018 J. Phys. Commun. 2 025013
[23] Kang Y B, Jeon D and Kim T 2020 J. Phys. Chem. C 124 18316
[24] Jeon D, Kang Y and Kim T 2021 ACS Appl. Electron. Mater. 4 124
[25] Zhang J, Lu W, Li Y S, Lu D, Zhang T, Wang X P and Chen L W 2012 J. Phys. Chem. Lett. 3 3509
[26] Chen Q, Lu W, Wu Y K, Ding H Y, Wang B and Chen L W 2014 Chin. J. Chem. Phys. 27 582
[27] Li Y S, Ge J, Cai J H, Zhang J, Lu W, Liu J and Chen L W 2014 Nano Res. 7 1623
[28] Dai P, Ji L, Tan M, Uchida S, Wu Y Y, Abuduwayiti A, Heini M, Guo Q, Bian L F, Lu S L and Yang H 2017 Sol. Energy Mater. Sol. Cells 171 118
[29] Lu W, Wang D and Chen L W 2007 Nano Lett. 7 2729
[30] Park J, Jeon D, Kang Y B, Yu Y J and Kim T 2019 J. Phys. Chem. Lett. 10 4010
[31] Qi G C, Yan H, Guan L, Yang Y L, Qiu X H, Wang C, Li Y B and Jiang Y P 2008 J. Appl. Phys. 103 114311
[32] Qi G C, Yang Y L, Yan H, Guan L, Li Y B, Qiu X H and Wang C 2009 J. Phys. Chem. C 113 204 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
