TY - Chin. Phys. B A1 - Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇) T1 - Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure Y1 - 2022-12-08 JF - Chinese Physics B JO - Chin. Phys. B SP - 17306 EP - 017306 VL - 32 IS - 1 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/ac8e99 ER -