TY - Chin. Phys. B
A1 - Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇)
T1 - Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure
Y1 - 2022-12-08
JF - Chinese Physics B
JO - Chin. Phys. B
SP - 17306
EP - 017306
VL - 32
IS - 1
UR - https://cpb.iphy.ac.cn
N1 - 10.1088/1674-1056/ac8e99
ER -