| CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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Scalable fabrication of Bi2O2Se polycrystalline thin film for near-infrared optoelectronic devices applications |
| Bin Liu(刘斌) and Hong Zhou(周洪)† |
| School of Physics and Electronics, Hunan University, Changsha 410082, China |
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Abstract We present a controlled, stepwise formation of layered semiconductor Bi2O2Se thin films prepared via the vapour process by annealing topological insulator Bi2Se3 thin films in low oxygen atmosphere for different reactions. Photodetectors based on Bi2O2Se thin film show a responsivity of 1.7×104 A/W at a wavelength of 980 nm. Field-effect transistors based on Bi2O2Se thin film exhibit n-type behavior and present a high electron mobility of 17 cm2/V·s. In addition, the electrical properties of the devices after 4 months keeping in the air shows little change, implying outstanding air-stability of our Bi2O2Se thin films. From the obtained results, it is evident that low oxygen annealing is a surprisingly effective method to fabricate Bi2O2Se thin films for integrated optoelectronic applications.
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Received: 25 April 2021
Revised: 27 June 2021
Accepted manuscript online: 18 July 2021
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PACS:
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68.55.-a
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(Thin film structure and morphology)
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81.10.Bk
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(Growth from vapor)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the Hunan Provincial Natural Science Foundation of China (Grant No. 2019JJ40032). |
Corresponding Authors:
Hong Zhou
E-mail: zhouhong@hnu.edu.cn
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Cite this article:
Bin Liu(刘斌) and Hong Zhou(周洪) Scalable fabrication of Bi2O2Se polycrystalline thin film for near-infrared optoelectronic devices applications 2021 Chin. Phys. B 30 106803
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