School of Electronic Engineering, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Abstract A graphene/AlGaN deep-ultraviolet (UV) photodetector is presented with ultrahigh responsivity of 3.4×105 A/W at 261 nm incident wavelength and 149 pW light power. A gain mechanism based on electron trapping at the potential well is proposed to be responsible for the high responsivity. To optimize the trade-off between responsivity and response speed, a back-gate electrode is designed at the AlGaN/GaN two-dimensional electron gas (2DEG) area which eliminates the persistent photocurrent effect and shortens the recovery time from several hours to milliseconds. The 2DEG gate is proposed as an alternative way to apply the back gate electrode on AlGaN based devices on insulating substrates. This work sheds light on a possible way for weak deep-UV light detection.
Fund: Project supported by the Research Innovation Fund for College Students of Beijing University of Posts and Telecommunications (Grant No. 202002046) and the National Natural Science Foundation of China (Grant No. 61804012).
Corresponding Authors: †These authors contributed equally to this work. ‡Corresponding author. E-mail: anqihu@bupt.edu.cn§Corresponding author. E-mail: guox@bupt.edu.cn
Cite this article:
Jinhui Gao(高金辉), Yehao Li(李叶豪), Yuxuan Hu(胡宇轩), Zhitong Wang(王志通), Anqi Hu(胡安琪), and Xia Guo(郭霞)\ccclink A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity 2020 Chin. Phys. B 29 128502
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