Growth and structural characteristics of metastable β-In2Se3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy

doi:10.1088/1674-1056/ab820f

Abstract Epitaxial growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates are studied. The In₂Se₃ thin films grown below the β-to-α phase transition temperature (453 K) are characterized to be strained β-In₂Se₃ mixed with significant γ-In₂Se₃ phases. The pure-phased single-crystalline β-In₂Se₃ can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In₂Se₃ within the phase equilibrium temperature window of β-In₂Se₃. It is suggeted that the observed γ-to-β phase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In₂Se₃ thin-film system at a state far from thermodynamic equilibrium.

Keywords: In₂Se₃ molecular beam epitaxy single-crystalline annealing and quench phase transition

Received: 31 January 2020
Revised: 14 March 2020
Accepted manuscript online:

PACS:	64.60.My	(Metastable phases)
	68.55.-a	(Thin film structure and morphology)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	68.35.Gy	(Mechanical properties; surface strains)

Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0306102 and 2018YFA0306703), the National Natural Science Foundation of China (Grant Nos. 61474014 and U1601208), and the Sichuan Science and Technology Program, China (Grant Nos. 2019YJ0202 and 20GJHZ0229).

Corresponding Authors: Han-Dong Li, Xiao-Hong Zhu
E-mail: hdli@uestc.edu.cn;xhzhu@scu.edu.cn

Cite this article:

Yi-Fan Shen(沈逸凡), Xi-Bo Yin(尹锡波), Chao-Fan Xu(徐超凡), Jing He(贺靖), Jun-Ye Li(李俊烨), Han-Dong Li(李含冬), Xiao-Hong Zhu(朱小红), Xiao-Bin Niu(牛晓滨) Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy 2020 Chin. Phys. B 29 056402

[1]	Han G, Chen Z G, Drennan J and Zou J 2014 Small 10 2747
[2]	Island J O, Blanter S I, Buscema M, Van der Zant H S J and Castellanos-Gomez A 2015 Nano Lett. 15 7853
[3]	Jacobs-Gedrim R B, Shanmugam M, Jain N, Durcan C A, Murphy M T, Murray T M, Matyi R J, Moore R L and Yu B 2014 ACS Nano 8 514
[4]	Ding W J, Zhu J B, Wang Z, Gao Y F, Xiao D, Gu Y, Zhang Z Y and Zhu W G 2017 Nat. Commun. 8 14956
[5]	Cui C J, Hu W J, Yan X X, Addiego C, Gao W P, Wang Y, Wang Z, Li L Z, Cheng Y C, Li P, Zhang X X, Alshareef H N, Wu T, Zhu W G, Pan X Q and Li L J 2018 Nano Lett. 18 1253
[6]	Poh S M, Tan S J R, Wang H, Song P, Abidi I H, Zhao X X, Dan J D, Chen J S, Luo Z T, Pennycook S J, Castro Neto A H and Loh K P 2018 Nano Lett. 18 6340
[7]	Zhai T Y, Fang X S, Liao M Y, Xu X J, Li L, Liu B D, Koide Y, Ma Y, Yao J N, Bando Y and Golberg D 2010 ACS Nano 4 1596
[8]	Ho C H, Lin C H, Wang Y P, Chen Y C, Chen S H and Huang Y S 2013 ACS Appl. Mater. Interfaces 5 2269
[9]	Li Q L, Liu C H, Nie Y T, Chen W H, Gao X, Sun X H and Wang S D 2014 Nanoscale 6 14538
[10]	Li H D, Ren W Y, Wang G Y, Gao L, Peng R M, Li H, Zhang P Y, Shafa M, Tong X, Luo S Y, Zhou Z H, Ji H N, Wu J, Niu X B and Wang Z M 2016 J. Phys. D: Appl. Phys. 49 145108
[11]	Chen J, Du G and Liu X Y 2015 Chin. Phys. B 24 057702
[12]	Choi M S, Cheong B K, Ra C H, Lee S, Bae J H, Lee S, Lee G D, Yang C W, Hone J and Yoo W J 2017 Adv. Mater. 29 1703568
[13]	Pandiana M, Matheswarana P, Gokul B, Sathyamoorthy R and Asokan K 2018 Appl. Surf. Sci. 449 55
[14]	Lee H, Kang D H and Tran L 2005 Mater. Sci. Eng. B 119 196
[15]	Jin B, Kang D, Kim J, Meyyappan M and Lee J S 2013 J. Appl. Phys. 113 164303
[16]	Wu G J, Wang X D, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J L, Zhang S T, Bian L F, Sun J L, Meng X J and Chu J H 2016 Nanotechnology 27 364002
[17]	Zheng Z Q, Yao J D and Yang G W 2017 ACS Appl. Mater. Interfaces 9 7288
[18]	Feng W, Gao F, Hu Y X, Dai M J, Liu H, Wang L F and Hu P A 2018 ACS Appl. Mater. Interfaces 10 27584
[19]	Chaiken A, Nauka K, Gibson G A, Lee H, Yang C C, Wu J, Ager J W, Yu K M and Walukiewicz W 2003 J. Appl. Phys. 94 2390
[20]	Okamoto T, Yamada A and Konagai M 1997 J. Cryst. Growth 175-176 1045
[21]	Zheng Z Q, Yao J D, Xiao J and Yang G W 2016 J. Mater. Chem. C 4 8094
[22]	Balakrishnan N, Staddon C R, Smith E F, Stec J, Gay D, Mudd G W, Makarovsky O, Kudrynskyi Z R, Kovalyuk Z D, Eaves L, PatanéA and Beton P H 2016 2D Mater. 3 025030
[23]	Zhou S, Tao X and Gu Y 2016 J. Phys. Chem. C 120 4753
[24]	Ren W Y, Li H D, Gao L, Li Y, Zhang Z Y, Long C J, Ji H N, Niu X B, Lin Y and Wang Z W 2017 Nano Res. 10 247
[25]	Li H D, Yu S P, Li Y, Channa A I, Ji H N, Wu J, Niu X B and Wang Z M 2019 Appl. Phys. Lett. 115 041602
[26]	Li H D, Wang Z Y, Guo X, Wong T L, Wang N and Xie M H 2011 Appl. Phys. Lett. 98 043104
[27]	Yuan Y F, Cao X R, Sun Y, Su J, Liu C M, Cheng L, Yuan L H, Zhang H and Li J 2017 RSC Adv. 7 46431
[28]	Zhang F, Wang Z, Dong J Y, Nie A M, Xiang J Y, Zhu W G, Liu Z Y and Tao C G 2019 ACS Nano 13 8004
[29]	Ke F, Liu C L, Gao Y, Zhang J K, Tan D Y, Han Y H, Ma Y Z, Shu J F, Yang W G, Chen B, Mao H K, Chen X J and Gao C X 2014 Appl. Phys. Lett. 104 212102
[30]	Rasmussen A M, Mafi E, Zhu W G, Gu Y and McCluskey M D 2016 High Press. Res. 36 549
[31]	Huang Y P, Huang X L, Wang X, Zhang W T, Zhou D, Zhou Q, Liu B B and Cui T 2019 Chin. Phys. B 28 096402
[32]	Li H D, Zhang X N, Zhang Z, Mei Z X, Du X L and Xue Q K 2007 J. Appl. Phys. 101 106102

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Growth and structural characteristics of metastable β-In2Se3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy

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Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy