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Chin. Phys. B, 2019, Vol. 28(5): 056801    DOI: 10.1088/1674-1056/28/5/056801

Epitaxial fabrication of two-dimensional TiTe2 monolayer on Au(111) substrate with Te as buffer layer

Zhipeng Song(宋志朋)1, Bao Lei(雷宝)1, Yun Cao(曹云)1, Jing Qi(戚竞)1, Hao Peng(彭浩)1, Qin Wang(汪琴)1, Li Huang(黄立)1, Hongliang Lu(路红亮)1, Xiao Lin(林晓)1,3, Ye-Liang Wang(王业亮)1,2, Shixuan Du(杜世萱)1,3, Hong-Jun Gao(高鸿钧)1,3
1 Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China;
3 CAS Center for Excellence in Topological Quantum Computation, Beijing 100049, China

Two-dimensional (2D) materials provide a platform to exploit the novel physical properties of functional nanodevices. Here, we report on the formation of a new 2D layered material, a well-ordered monolayer TiTe2, on a Au(111) surface by molecular beam epitaxy (MBE). Low-energy electron diffraction (LEED) measurements of the samples indicate that the TiTe2 film forms (√3×√7) superlattice with respect to the Au(111) substrate, which has three different orientations. Scanning tunneling microscopy (STM) measurements clearly show three ordered domains consistent with the LEED patterns. Density functional theory (DFT) calculations further confirm the formation of 2H-TiTe2 monolayer on the Au(111) surface with Te as buffer layer. The fabrication of this 2D layered heterostructure expands 2D material database, which may bring new physical properties for future applications.

Keywords:  TiTe2      epitaxial fabrication      superlattice      scanning tunneling microscopy (STM)      low-energy electron diffraction (LEED)  
Received:  03 February 2019      Revised:  05 March 2019      Accepted manuscript online: 
PACS:  68.37.-d (Microscopy of surfaces, interfaces, and thin films)  
  68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))  
  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  

Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YFA0305800), the National Natural Science Foundation of China (Grant Nos. 61504149, 61725107, 51572290, and 61622116), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), the University of Chinese Academy of Sciences, and the CAS Key Laboratory of Vacuum Physics.

Corresponding Authors:  Hongliang Lu     E-mail:

Cite this article: 

Zhipeng Song(宋志朋), Bao Lei(雷宝), Yun Cao(曹云), Jing Qi(戚竞), Hao Peng(彭浩), Qin Wang(汪琴), Li Huang(黄立), Hongliang Lu(路红亮), Xiao Lin(林晓), Ye-Liang Wang(王业亮), Shixuan Du(杜世萱), Hong-Jun Gao(高鸿钧) Epitaxial fabrication of two-dimensional TiTe2 monolayer on Au(111) substrate with Te as buffer layer 2019 Chin. Phys. B 28 056801

[1] Novoselov K S, Mishchenko A, Carvalho A and Castro Neto A H 2016 Science 353 aac9439
[2] Pan Y, Zhang L Z, Huang L, Li L F, Meng L, Gao M, Huan Q, Lin X, Wang Y L, Du S X, Freund H J and Gao H J 2014 Small 10 2215
[3] Lin X, Lu J C, Shao Y, Zhang Y Y, Wu X, Pan J B, Gao L, Zhu S Y, Qian K, Zhang Y F, Bao D L, Li L F, Wang Y Q, Liu Z L, Sun J T, Lei T, Liu C, Wang J O, Ibrahim K, Leonard D N, Zhou W, Guo H M, Wang Y L, Du S X, Pantelides S T and Gao H J 2017 Nat. Mater. 16 717
[4] Dong L, Wang A, Li E, Wang Q, Li G, Huan Q and Gao H J 2019 Chin. Phys. Lett. 36 028102
[5] Meng L, Wang Y L, Zhang L Z, Du S X and Gao H J 2015 Chin. Phys. B 24 086803
[6] Huang L, Li G, Zhang Y Y, Bao L H, Huan Q, Lin X, Wang Y L, Guo H M, Shen C M, Du S X and Gao H J 2018 Acta Phys. Sin. 67 126801 (in Chinese)
[7] Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Nat. Nanotechnol. 7 699
[8] Lu J, Bao D L, Qian K, Zhang S, Chen H, Lin X, Du S X and Gao H J 2017 ACS Nano 11 1689
[9] Terrones H, Lopez-Urias F and Terrones M 2013 Sci. Rep. 3 1549
[10] Chhowalla M, Shin H S, Eda G, Li L J, Loh K P and Zhang H 2013 Nat. Chem. 5 263
[11] Reshak A H and Auluck S 2003 Phys. Rev. B 68 245113
[12] Hildebr, B, Jaouen T, Mottas M L, Monney G, Barreteau C, Giannini E, Bowler D R and Aebi P 2018 Phys. Rev. Lett. 120 136404
[13] Chen P, Pai W W, Chan Y H, Takayama A, Xu C Z, Karn A, Hasegawa S, Chou M Y, Mo S K, Fedorov A V and Chiang T C 2017 Nat. Commun. 8 516
[14] Mak K F, He K, Shan J and Heinz T F 2012 Nat. Nanotechnol. 7 494
[15] Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 105 136805
[16] Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G and Wang F 2010 Nano Lett. 10 1271
[17] Zhang Y, Chang T R, Zhou B, Cui Y T, Yan H, Liu Z, Schmitt F, Lee J, Moore R, Chen Y, Lin H, Jeng H T, Mo S K, Hussain Z, Bansil A and Shen Z X 2013 Nat. Nanotechnol. 9 111
[18] Bonilla M, Kolekar S, Ma Y, Diaz H C, Kalappattil V, Das R, Eggers T, Gutierrez H R, Manh-Huong P and Batzill M 2018 Nat. Nanotechnol. 13 289
[19] Shao Y, Song S, Wu X, Qi J, Lu H, Liu C, Zhu S, Liu Z, Wang J, Shi D, Du S, Wang Y and Gao H J 2017 Appl. Phys. Lett. 111 113107
[20] Xi X, Zhao L, Wang Z, Berger H, Forro L, Shan J and Mak K F 2015 Nat. Nanotechnol. 10 765
[21] Guster B, Robles R, Pruneda M, Canadell E and Ordejon P 2019 2d Materials 6 015027
[22] Mounet N, Gibertini M, Schwaller P, Campi D, Merkys A, Marrazzo A, Sohier T, Castelli I E, Cepellotti A, Pizzi G and Marzari N 2018 Nat. Nanotechnol. 13 246
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