Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors

doi:10.1088/1674-1056/28/4/047804

Abstract

Perovskite photoconductor-type photodetector with metal-semiconductor-metal (MSM) structure is a basic device for photodetection applications. However, the role of electrode interlayer in MSM-type perovskite devices is less investigated compared to that of the pin diode structure. Here, a systematic investigation on the influence of phenyl-C₆₁-butyric acid methyl ester (PCBM) and indene-C₆₀ bisadduct (ICBA) interfacial layers for MSM perovskite photodetectors is reported. It is found that the fullerene-based interlayer significantly enhances the photocurrent of the MSM photodetectors. On one hand, the PCBM interlayer is more suitable for CH₃NH₃PbI₃ photodetector, with the responsivity two times higher than that of the device with ICBA interlayer. The ICBA layer, on the other hand, becomes more effective when the band gap of perovskite is enlarged with bromine composition, denoted as CH₃NH₃Pb(I_1-xBr_x)₃ (0 ≤ x ≤ 1). It is further found that the specific detectivity of photodetectors with ICBA interlayer becomes even higher than those with PCBM when the bromine compositional percentage reaches 0.6 (x > 0.6).

Keywords: interlayer perovskite photodetectors

Received: 10 January 2019
Revised: 27 February 2019
Accepted manuscript online:

PACS:	78.56.-a	(Photoconduction and photovoltaic effects)
	78.66.Db	(Elemental semiconductors and insulators)
	78.66.Sq	(Composite materials)
	78.66.Tr	(Fullerenes and related materials)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202002), the Natural Science Foundation of Guangdong Province, China (Grant No. 2018A030313332), and the Fund from Shenzhen Science and Technology Innovation Commission, China (Grant No. JCYJ20160229122349365, High Sensitivity Perovskite Image Sensor Program).

Corresponding Authors: Hang Zhou
E-mail: ruifeng.zhouh81@pkusz.edu.cn

Cite this article:

Wen Luo(罗文), Li-Zhi Yan(闫立志), Rong Liu(刘荣), Tao-Yu Zou(邹涛隅), Hang Zhou(周航) Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors 2019 Chin. Phys. B 28 047804

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Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors

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