Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/27/7/078503

Abstract

In this paper, we adopted thermally stable HfO_xN_y as gate dielectric for TiN/HfO_xN_y/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfO_xN_y films were dependent on oxygen flow rate in the O₂/N₂/Ar mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO₂ and HfO_xN_y dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfO_xN_y dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO₂ gated one at 600 ℃. This result shows that the HfO_xN_y dielectric is a promising candidate for the self-aligned gate process.

Keywords: AlGaN/GaN HFET gate dielectric HfO_xN_y thermal stability

Received: 25 January 2018
Revised: 08 May 2018
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	77.55.D-
	61.82.Ms	(Insulators)
	68.60.Dv	(Thermal stability; thermal effects)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Corresponding Authors: Liuan Li, Jin-Ping Ao
E-mail: liliuan@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp

Cite this article:

Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平) Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors 2018 Chin. Phys. B 27 078503

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Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

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Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors