1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China; 2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
Abstract We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown (TDDB). Under a high forward gate bias stress, newly increased traps generate both at the SiNx/AlGaN interface and the SiNx bulk, resulting in the voltage shift and the increase of the voltage hysteresis. When prolonging the stress duration, the defects density generated in the SiNx dielectric becomes dominating, which drastically increases the gate leakage current and causes the catastrophic failure. After recovery by UV light illumination, the negative shift in threshold voltage (compared with the fresh one) confirms the accumulation of positive charge at the SiNx/AlGaN interface and/or in SiNx bulk, which is possibly ascribed to the broken bonds after long-term stress. These results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs.
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant Nos. 2019B010128002 and 2020B010173001), the National Natural Science Foundation of China (Grant Nos. U1601210 and 61904207), the Natural Science Foundation of Guangdong Province of China (Grant No. 2015A030312011), and the China Postdoctoral Science Foundation (Grant No. 2019M663233).
Corresponding Authors:
Yang Liu
E-mail: liuy69@mail.sysu.edu.cn
Cite this article:
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric 2020 Chin. Phys. B 29 067203
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